Method for manufacturing solid-state image sensor

[0014]FIG. 1 is a schematic view showing an example of the structure of a solid-state image sensor (to be referred to as a “solid-state image sensor 100”) according to the present invention. The solid-state image sensor 100 includes, for example, a semiconductor substrate 101 made of silicon or the like, a structure 110 which includes an insulating member and a metal member (an interconnection, a plug, or the like) formed in the insulating member, and a structure 410 which includes an optical element for condensing incident light. The solid-state image sensor 100 also includes an imaging region 109 in which a plurality of pixels are arrayed and a peripheral region 203 which surrounds the imaging region 109 and in which a circuit configured to process a pixel signal is arranged.

[0015]In the imaging region 109, photoelectric conversion portions 102 are formed in the substrate 101. A transistor configured to read out or process the pixel signal is also formed in the substrate 101. A gate