CMOS image sensor having wide dynamic range and sensing method thereof

a technology of image sensor and dynamic range, which is applied in the field of cmos image sensor, can solve the problems of not being able to say which method is remarkably superior, and achieve the effects of wide dynamic range, wide dynamic range, and improved dynamic rang

Active Publication Date: 2012-02-09
ZEEANN
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Benefits of technology

[0027]A CMOS image sensor according to the present invention includes a unit pixel that divisionally integrates electrons generated by the exposure of the light using a photodiode in many times, and outputs signals corresponding to the multiple exposure integrations as plural signals of one pixel in parallel, thereby largely improving the dynamic range within which the image sensor properly respond to the brightness of the light.
[0028]A CMOS image sensor according to the present invention reaches the wide dynamic range performance for both of the global shuttering and the rolling shuttering schemes.
[0029]Further, the CMOS image sensor according to the present invention can obtain wide dynamic range without including additional memories outside the pixel array and with relatively simple image processing.
[0030]Further, in fabricating pixels of the CMOS image sensor according to the present invention, there is no need to develop any additional process except processes to fabricate a general 4-transistor image sensor pixel in the art.

Problems solved by technology

Since merits coexist with demerits in such various methods, it is not easy to say which method is remarkably superior to the others.

Method used

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Embodiment Construction

[0036]In a CMOS image sensor including an array of unit pixel according to the present invention, the unit pixel is connected to a first output signal line and a second output signal line that are arranged in each column of the array.

[0037]Further, the unit pixel includes a photodiode; a first processing unit connected to the photodiode, that amplifies a first floating diffusion voltage formed by being provided with electrons accumulated in the photodiode during a first exposure integration time and transmits the amplified voltage to the first output signal line; a second processing unit connected to the photodiode, that amplifies a second floating diffusion voltage formed by being provided with electrons accumulated in the photodiode during a second exposure integration time which is separated from the first exposure integration time and transmits the amplified voltage to the second output signal line; and an erasing transfer gate transistor arranged between the photodiode and a po...

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Abstract

Disclosed are a CMOS image sensor having a wide dynamic range and a sensing method thereof. Each unit pixel of the CMOS image sensor of the present invention includes multiple processing units, so that one shuttering section for the image generation of one image frame can be divided into multiple sections to separately shutter and sample the divided sections by each processing unit. Thus, the image sensor of the present invention enables many shuttering actions to be performed in the multiple processing units, respectively, and the multiple processing units to separately sample each floating diffusion voltage caused by the shuttering actions, thereby realizing a wide dynamic range.

Description

TECHNICAL FIELD[0001]The present invention relates to a CMOS image sensor having wide dynamic range with respect to the brightness of the light and a sensing method thereof.BACKGROUND ART[0002]CMOS (Complementary Metal Oxide Semiconductor) image sensor is a sensor produced using a CMOS manufacturing technology, which converts the light incident on each pixel of the sensor into electrons using photodiodes and then outputs voltage signals in proportion to the number of electrons, thereby making them images.[0003]Dynamic range within which a conventional CMOS image sensor properly responds to the brightness of the light is about 60 dB. In other words, the image sensor normally responds to the light ranging from the sensible minimal brightness of the light to about 1000 times of it, thereby outputting signals. Even in the art, a number of methods to widen the dynamic range of the CMOS image sensor have been suggested.[0004]For example, U.S. Pat. No. 7,443,427 discloses a pixel structure...

Claims

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Application Information

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Patent Type & Authority Applications(United States)
IPC IPC(8): H04N5/374
CPCH01L27/14609H04N5/37452H04N5/35554H04N25/583H04N25/771H01L27/146
Inventor LEE, JAWOONGCHO, JUN HEECHOI, JONG BEOM
Owner ZEEANN
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