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39 results about "Conductive materials" patented technology

'Electrically Conductive' means the ability of any material or object to conduct electricity through it with offering least possible resistance to the flow of electrons. Silver is found to be the most conductive material of all.

Wheel luminaire

InactiveUS6168301B1Vehicle interior lightingDisplay meansElectricityConductive materials
A system for illuminating a wheel on a vehicle, the wheel having a concave area adapted for mounting around a wheel hub attached to stationary structure on the vehicle, the vehicle having an electrical power source. The system includes a contact ring that includes a circular backing ring of an electrically insulating material and a layer of electrically conductive material over the backing ring. The contact ring is flexibly supported from the concave area of the wheel where a contact brush mounted from the stationary structure of the vehicle makes contact with the layer of electrically conductive material on the contact ring. At least one electrical light emitting device is electrically connected to the layer of electrically conductive material on the contact ring, so that electrical power from the power source reaches the light emitting device through the contact brush and through the contact ring.
Owner:MARTINEZ MARVIN R +1

TFT array substrate manufacture method

ActiveCN105702623AReduce sizeNo short circuit problemSolid-state devicesSemiconductor/solid-state device manufacturingPixel densitySlope angle
The invention provides a TFT (Thin Film Transistor) array substrate manufacture method which comprises the following steps: coating and forming a flat layer on source electrodes and drain electrodes; instead of processing via holes, depositing and patterning a common electrode layer and a passivated protection layer; forming via holes in the passivated protection layer so as to expose the flat layer, and then ashing the flat layer so as to expose the drain electrodes. Compared with a conventional method by which the common electrode layer is deposited and patterned after the via holes are formed in the flat layer, the TFT array substrate manufacture method described in the invention is advantageous in that no electrically conductive material will be left in the via holes of the flat layer when the common electrode layer is patterned, and therefore no short circuit problem will occur in the via holes of the flat layer; the via holes are formed in the flat layer in a pixel region by a means of dry etching through ashing operation, the formed via holes are allowed to have large slope angles, and therefore the size of a TFT can be reduced to a certain extent and and pixel density can be improved.
Owner:WUHAN CHINA STAR OPTOELECTRONICS TECH CO LTD

Semiconductor device and manufacturing method thereof

A semiconductor device comprises a first insulating film formed over a semiconductor substrate, a second insulating film formed on the first insulating film, a contact plug made of a conductive material vertically penetrating the first and second insulating films and extending on the second insulating film, and a conductor film in contact with the upper surface of the contact plug and part of the second insulating film. This construction makes it possible to form minute via-holes in a mass-production line without increasing parasitic capacity, increasing the number of manufacturing steps, and generating defects.
Owner:FUJITSU SEMICON LTD

Semiconductor device manufacturing method, semiconductor device, and wiring board

A semiconductor device manufacturing method includes (a) bonding a first surface of a metal plate to a substrate, (b) forming a plurality of metal posts that are arranged in vertical and lateral directions in a plan view and include a first metal post and a second metal post, by partially etching the metal plate bonded to the substrate from a second surface of the metal plate, (c) fixing an integrated circuit (IC) element to the second surface of the first metal post, (d) coupling the second metal post and a pad terminal of the integrated circuit element via a conductive material, (e) resin-sealing the integrated circuit element, the metal posts, and the conductive material by providing a resin onto the substrate, and (f) removing the substrate from the resin and the first surfaces of the metal posts sealed using the resin.
Owner:SEIKO EPSON CORP

Direct oxidation fuel cells with improved cathode gas diffusion media for low air stoichiometry operation

InactiveUS20080176112A1Promote oxidationSimple methodNanotechFuel cell auxillariesFuel cellsEngineering
A cathode for use in a direct oxidation fuel cell (DOFC) comprises a gas diffusion medium (GDM) including a backing layer and a microporous layer comprising a fluoropolymer and an electrically conductive material, wherein loading of the fluoropolymer in the microporous layer is in the range from about 10 to about 60 wt. %. In use, a concentrated solution of a liquid fuel is supplied to an anode and an oxidant to the cathode of the fuel cell, and the fuel cell may be operated at a low oxidant stoichiometry ξc not greater than about 2.5.
Owner:PANASONIC CORP +1

Integrated thermal door component for head mounted display

InactiveUS20190104650A1Near-field for read/write/interrrogation/identification systemsDetails for portable computersDisplay deviceConductive materials
A head mounted display (HMD) device for supporting virtual reality and augmented reality includes a frame and a thermal door component between which a mobile device may be sandwiched. The thermal door component includes a first portion that is substantially planar for reversibly coupling with a portion of a back surface of the mobile device and a heat sink. The heat sink includes a substantially planar portion coupled to a surface of the first portion of the thermal door component. The heat sink may be made of magnesium or other thermally conductive material. A second portion is coupled to the back of the first portion. An opening, channel, or recess that allows access to the interior of the thermal door component by ambient air to allow the thermal door component to draw heat away from the mobile device and the HMD device.
Owner:GOOGLE LLC

Fabrication Process Using Circuit-on-Wire

A method is provided for forming a circuit-on-wire (CoW) assembly. The method forms a flexible line with a plurality of periodic alignment marks used as a guide to place CoW devices overlying a surface of the flexible line. The CoW devices may be LEDs, capacitors, diodes, photodiodes, resistors, thin-film transistors, or combinations of the above-listed elements. The flexible line may be a conductive material, such as a metal wire, and the periodic alignment marks may be vias formed through the wire. If the flexible line is electrically conductive, an electrically conductive adhesive may be applied to the electrically conductive line, so that an electrical connection is formed between the CoW devices and the electrically conductive line. Subsequent to placing the CON devices, processes may be formed on the flexible line and CoW devices such as lithographic etching and thin-film deposition. An active matrix array using CoW devices is also presented.
Owner:SHARP KK

Manufacturing method of surface mounted device resistor

ActiveCN102082017ALow costReduce dosageResistors adapted for applying terminalsSilver pasteSputtering
The invention discloses a manufacturing method of a surface mounted device (SMD) resistor. The method for manufacturing a positive electrode of the SMD resistor comprises the following steps: firstly, printing a resistive layer; secondly, printing and covering a positive auxiliary electrode at both sides of a position in which the resistive layer is close to the positive electrode; and thirdly, sputtering to form the positive electrode, thus ensuring the connectivity between the positive electrode and the resistive layer and strengthening the stability of a product. The positive electrode is used for sputtering a conductive material which takes silver as a main composition in a vacuum sputtering mode. The sputtered conductive material can be sputtered uniformly to a substrate surface. A sputtered electrode layer has the advantages of thin film and excellent uniformity, thus ensuring the uniformity of the film thickness of the positive electrode and overcoming the shortcoming that the initial value of the resistor is easy-dispersed. Besides, the cost of the conductive material taking the silver as the main component is lower than that of silver paste, and the amount of the conductive materials is less, thus effectively reducing the production cost of products, improving the market competitiveness of the products and being suitable for batch production.
Owner:UNIROYAL ELECTRONICS IND

Positive electrode for nonaqueous electrolyte secondary battery and nonaqueous electrolyte secondary battery

ActiveUS20170187036A1InhibitionWithout deteriorating battery characteristicFinal product manufactureElectrode carriers/collectorsLithiumInorganic particle
The positive electrode as an embodiment includes a positive electrode current collector mainly composed of aluminum, a positive electrode mixture layer containing a lithium-containing transition metal oxide and disposed above the positive electrode current collector, and a protective layer disposed between the positive electrode current collector and the positive electrode mixture layer. The protective layer contains inorganic particles, an electro-conductive material, and a binding material; is mainly composed of the inorganic particles; and is disposed on the positive electrode current collector to cover the positive electrode current collector in approximately the entire area where the positive electrode mixture layer is disposed and at least a part of the exposed portion of the positive electrode current collector where the positive electrode mixture layer is not disposed on the surface of the positive electrode current collector.
Owner:PANASONIC CORP

Flip type vertical pressing joint POGO conducting device

The invention discloses a flip type vertical pressing joint POGO conducting device which comprises an upper flip cover, a lower base and a middle floating plate. The upper flip cover is hinged to theupper end of the middle floating plate, he middle floating plate is arranged to be parallel to the upper end of the lower base, and a floating tool is arranged between the middle floating plate and the lower base. A needle die is arranged on the upper flip cover, and a pressing joint elastic sheet is of a flat panel structure and comprises a to-be-measured panel through connection part, an FPC through connection part and a bending part. The bending part is composed of two or more metal conducting bands which are arranged in parallel at intervals, and each metal conducting band is made of a conductive material capable of achieving elastic deformation. The width of each metal conducting band is larger than or equal to one fourth of the width of a probe head and smaller than or equal to one third of the probe head. The flip type vertical pressing joint POGO conducting device is simple in structure and convenient to use, a to-be-measured display panel can be placed conveniently, and the vertical pressing joint of the needle die on the flip cover of the POGO conducting device and a connector of the to-be-measured display panel and the conductive performance of the needle die are effectively guaranteed.
Owner:WUHAN JINGCE ELECTRONICS GRP CO LTD

Dielectric fluid for electric discharge machining a non electrically conductive material

InactiveCN101410214ARapid Ablation ProcessingPromote rapid formationDielectricElectric discharge
The invention relates to a dielectric fluid (5) for electrical discharge machining an electrically non-conductive material, characterised in that it is of an aqueous solution or an aqueous suspension of at least one carbonaceous substance.
Owner:SIEMENS AG

Configurable two-dimensional micro-plasma array device and preparation method thereof

InactiveCN101794699AIncreased size flexibilityIncrease array densityCold-cathode tubesCold cathode manufactureConductive materialsDielectric layer
The invention discloses a configurable two-dimensional micro-plasma array device and preparation method thereof. The device consists of at least two electrode layers and at least one micro-cavity layer which are stacked, the layers are contacted closely, the electrode layers are on the two outermost sides, and the electrode layers and the micro-cavity layer are all provided with at least two positioning holes and are aligned through the positioning holes; a conductive material sheet of a dielectric layer or an insulation sheet made of insulation material is covered on the surface of the micro-cavity layer; the edge of the micro-cavity layer is provided with sunken linear array micro-cavities, and the micro-cavities are isolated by a barrier; the electrode layers are the conductive material sheets; and electrodes are led out from the micro-cavity layer and the electrode layers respectively. The preparation method comprises the following steps: cutting a sheet material into the same rectangular sheets serving as the electrode layers and the micro-cavity layer, aligning the electrode layers with the micro-cavity layer, and assembling the electrode layers and the micro-cavity layers layer by layer as required. The size of a micro-plasma array can be flexibly changed, the process difficulty and cost are lowered, and the device array density, device size and reliability are improved.
Owner:SHANDONG UNIV

High-intensity high-speed informationization manned spacecraft manufactured by new graphene materials

InactiveCN102745344AHigh hardnessImprove conductivityArtificial satellitesSecondary cellsRe entryNew energy
The invention relates to a high-intensity high-speed informationization manned spacecraft manufactured by new graphene materials and belongs to the technical field of applications of new materials and new energies. A propelling module, a propeller, a re-entry module, an orbital module, a butt joint mechanism, an egress hatch and a porthole of the manned spacecraft are manufactured by the new graphene materials, the strength of graphene mechanical parts is higher than that of titanium structure parts, small celestial bodies in the space and space junk are prevented from hitting against the spacecraft, and the surfaces of the graphene mechanical parts can inhibit bacteria; a conductor wire, a camera, a storage battery, a first graphene computer system, a first graphene communication system, a second graphene computer system and a second graphene communication system which are manufactured by the new graphene materials are capable of accelerating moving speeds of electrons in electric components and obviously improving working efficiencies of the electric components when compared with those manufactured by existing conducting materials. When the sun irradiates a graphene solar battery in the space, electricity currents are generated and rapidly and continuously transport the electricity to the graphene manned spacecraft through the graphene conductor wire.
Owner:WUXI TONGCHUN NEW ENERGY TECH

Electronic module and manufacturing method thereof

ActiveCN104103631AIncrease surface areaWill not affect normal workSemiconductor/solid-state device detailsSolid-state devicesElectromagnetic electron waveComputer module
The invention discloses an electronic module and a manufacturing method thereof. The electronic module comprises a substrate, an electronic element, a mould sealing layer and a composite electromagnetic wave mask layer. The electronic element is configured on the substrate. The mould sealing layer covers a part of bearing surface of the electronic element and the substrate. The mould sealing layer is provided with an upper surface which is provided with a three-dimensional geometric pattern. The composite electromagnetic wave mask layer covers the upper surface of the mould sealing layer with the advantage of the form so that electromagnetic wave is shielded. The composite electromagnetic wave mask layer comprises a magnetic material layer and a conductive material layer.
Owner:UNIVERSAL SCIENTIFIC INDUSTRIAL (SHANGHAI) CO LTD +1

Remote control device with improved shielding and grounding performance

InactiveUS20070247325A1Sufficient shielding and grounding propertyElectric signal transmission systemsElectrically conductive connectionsElectricityRemote control
A remote control device (100) includes an insulated housing (2, 3) including an outer surface (20, 30) plated with a conductive material for providing a suppression of EMI, an inner surface (21, 31), and a receiving space (4) defined by the outer surface and the inner surface, a printed circuit board (51) received in the receiving space, and including at least a first conductive pad (511), and a second conductive pad electrically connected to the first conductive pad by conductive trace, a cable including at least one grounding conductor electrically connected to the second conductive pad, grounding means (22) electrically connected to the conductive material and the first conductive pad for providing a sheath for ESD generated on the remote control device.
Owner:HON HAI PRECISION IND CO LTD

Electric arc discharge cutting head

InactiveCN103639578AFlat cutPlasma welding apparatusAgricultural engineeringCircular cone
The invention discloses an electric arc discharge cutting head which comprises a positive electrode and a negative electrode. The electric arc discharge cutting head is characterized in that the positive electrode is made of cone high temperature resisting conductive materials including an inner cone hole, the negative electrode is made of a cone bar high temperature resisting conductive materials including a circular cone head, a through hole is formed in the bottom of the cone hole of the positive electrode, high-temperature hot airflow is sprayed to a steel part through the through hole, the cone head of the negative electrode is inserted into the cone hole of the positive electrode, a metal sleeve is arranged on the outer column face of the positive electrode to prevent the positive electrode from bursting at high temperature and hurting people, a water jacket is arranged on the outer layer of the metal sleeve, a water inlet and a water outlet are formed, a high-temperature ceramic cover plate is fixedly connected to the upper end face of the positive electrode through screws, mirror face treatment is carried out on a combination face, the combination face is effectively sealed, a compressed gas inlet and a conductive column through hole of the negative electrode are formed in the high-temperature ceramic cover plate, mirror face treatment is carried out on the combination face of the upper end plane of the negative electrode and the high-temperature ceramic cover plate, a conductive column is fixed to the upper end plane of the negative electrode, and the combination face of the negative electrode and the high-temperature ceramic cover plate is effectively sealed under the traction of the conductive column.
Owner:ZHENJIANG NEW DISTRICT HUIDA ELECTROMECHANICAL TECH CO LTD

Semiconductor structure and forming method thereof

PendingCN112825308AImprove formation qualityReduce the impactSemiconductor/solid-state device detailsSolid-state devicesSemiconductor structureEngineering
The invention discloses a semiconductor structure and a forming method thereof, and the method comprises the steps: providing a substrate, and forming a conductive structure in the substrate; forming a dielectric layer covering the substrate; forming an interconnection opening exposing the conductive structure in the dielectric layer, wherein the interconnection opening comprises a plurality of communicated sub-openings in the thickness direction of the dielectric layer, the interconnection opening at least comprises one opening group, the opening group being composed of two adjacent sub-openings, and in the opening group, the transverse size of the sub-opening far away from one side of the substrate is smaller than that of the other sub-opening; and forming an interconnection structure in the interconnection opening. The manufacturing process for forming the interconnection structure comprises the step of grinding the conductive material in the interconnection opening; and since the transverse size of the sub-opening far away from one side of the substrate is smaller than that of the other sub-opening, in the grinding process, under the action of the opening group, the side wall of the interconnection opening can provide acting force pointing to the side wall of the conductive material, and the probability that the conductive material and the dielectric layer are layered is reduced.
Owner:SEMICON MFG INT (SHANGHAI) CORP +1
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