Semiconductor device and manufacturing method thereof
a semiconductor and semiconductor technology, applied in the direction of transistors, optics, instruments, etc., can solve the problems of increasing capacitance between each bit line and the storage node, difficult to reduce the number of sense amplifier divisions, etc., to improve reliability, improve production yield, and improve the effect of outpu
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[0112] At first, fundamental features of the present invention will be briefly described with reference to FIGS. 16A and 16B.
[0113] (1) A semiconductor device according to an aspect of the present invention comprises a first insulating film 2 formed over a semiconductor substrate 1, a second insulating film 3 formed on the first insulating film 2, a contact plug 5 made of a conductive material which vertically penetrates the first and second insulating films 2 and 3 and extends on the second insulating film 3, and a conductive film in contact with the upper surface of the contact plug 5 and part of the second insulating film 3.
[0114] In this manner, the contact plug 5 is made of a conductive material which vertically penetrates the first and second insulating films 2 and 3 and extends on the second insulating film 3. With this construction, The conductive film can be brought into close contact with the contact plug 5 in a three-dimensional manner. Besides, a large contact area bet...
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