Thin film transistor and method of fabricating the same

[0018] The present invention will now be described more fully hereinafter with reference to the accompanying drawings, in which preferred embodiments of the invention are shown. This invention may, however, be embodied in different forms and should not be construed as limited to the embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete, and will fully convey the scope of the invention to those skilled in the art. In the drawings, the thickness of layers and regions are exaggerated for clarity. Like numbers refer to like elements throughout the specification.

[0019]FIGS. 1a to 1d are cross-sectional views illustrating a crystallization process according to the present invention.

[0020] First, FIG. 1a is a cross-sectional view illustrating a process of sequentially forming a buffer layer, an amorphous silicon layer and a filtering oxide layer on a substrate. As shown in FIG. 1a, a buffer layer 102 is formed on an insula