7 results about "Nanowire" patented technology

Carbon-nanotube-based devices or nanowire-based devices are formed in multiple layers to obtain higher density of such devices. The layers may be all similar such as all carbon-nanotube-based transistors. Or they may be different, such as one layer with nanowire devices and another layer with nanotube devices. Or some layers such as the bottom layer may be based on silicon devices and another layer with nanotube devices. Traditional interconnects and vias may be used to connect layers and electrodes, or nanoscale materials such as nanotubes or nanowires may be used as interconnects or vias.

The invention belongs to the technical field of micro-electronics, particularly disclosing a nanowire MOS transistor and a preparation method thereof. The nanowire MOS transistor uses metallic nickel to serve as the drain and source diffusion material of III-V semiconductor nanowire and utilizes the nickel diffusion mechanism under high temperature to ensure that metallic nickel diffuses to III-V material; formed low-resistance Ni-III-V alloy serves as the drain and source diffusion material of the III-V semiconductor nanowire MOS pipe so as to realize ohmic contact between the drain and source material and channel material. The MOS transistor disclosed by the invention has the advantages of simple structure, convenient manufacture, small contact resistance and the like, can effectively lower the possibility of producing parasitic capacitance and effectively lowers the cut-off current of the MOS transistor. Meanwhile, the invention also discloses a preparation method of the nanowire MOS transistor, can effectively control the channel length of the MOS transistor so as to ensure that a semiconductor device has larger operating current.

This invention relates to the Sb2Te3 single-crystal nanometer line ordered array and its making method, the character is that the solutin is composed of the following componets: the citric acid coordination Sb3+; 4í†1 by Moore chroma,, nitrate dissolution Te power, 2í†3 by the SbO+í†HTeO2+ Moore chroma, wherein the pH of the plating liquid is 1-3, it uses the porous alumina templetits in the plating liquid as its working electrode and the black lead as its assistant electrode, its current density is controlled between 0.2mA/cm2 and 0.5mA/cm2, plating 0.5-2h can obtain the Sb2Te3 compound single-crystal nanometer line which grows in the 110 direction; and its single-crystal with hexagonal crystal series structure grows in the 110 direction, wherein the crystal cell parameter as follows:aú¢bú¢0.426nmíócú¢3.05nm. this invention fistly is under the condition of room-temperature and open system, and it uses electrochemical sediment principle to make the Sb2Te3 single-crystal nanometer line ordered array; the device in this invention is simple, which is easy to operate, and it fits for industry production.