74results about "Ion implantation coating" patented technology

A reactor for processing a substrate includes a first housing defining a processing chamber and supporting a light source and a second housing rotatably supported in the first housing and adapted to rotatably support the substrate in the processing chamber. A heater for heating the substrate is supported by the first housing and is enclosed in the second housing. The reactor further includes at least one gas injector for injecting at least one gas into the processing chamber onto a discrete area of the substrate and a photon density sensor extending into the first housing for measuring the temperature of the substrate. The photon density sensor is adapted to move between a first position wherein the photon density sensor is directed to the light source and a second position wherein the photon density sensor is positioned for directing toward the substrate. Preferably, the communication cables comprise optical communication cables, for example sapphire or quartz communication cables. A method of processing a semiconductor substrate includes supporting the substrate in a sealed processing chamber. The substrate is rotated and heated in the processing chamber in which at least one reactant gas is injected. A photon density sensor for measuring the temperature of the substrate is positioned in the processing chamber and is first directed to a light, which is provided in the chamber for measuring the incident photon density from the light and then repositioned to direct the photon density sensor to the substrate to measure the reflection of the light off the substrate. The incident photon density is compared to the reflected light to calculate the substrate temperature.

A sheet-like pane bearing a low-maintenance coating on one surface and a low-emissivity coating on the opposite surface, wherein one of the low-maintenance coating and the low-emissivity coating has a single surface reflectivity of less than 3 times, and more than one-third, that of the other coating.

A supported graphene device comprises at least one graphene feature of 1 to about 10 graphene layers having a predetermined shape and pattern, with at least a portion of each graphene feature being supported on a substrate. In some embodiments the device comprises graphene features supported on crystalline semiconductor substrate, such as silicon or germanium. The graphene features on a crystalline semiconductor substrate can be fabricated by forming an amorphous carbon doped semiconductor on the crystalline semiconductor substrate and then epitaxially crystallizing the amorphous semiconductor with carbon migration to the surface to form a graphene feature of one or more graphene layers. The epitaxy can be promoted by heating the device or by irradiation with a laser. Methods for fabricating graphene on a variety of substrates, over large areas with controlled thicknesses employ ion implantation or other doping techniques followed by pulsed laser annealing or other annealing techniques that result in solid phase regrowth are presented.

Provided is a copper or copper alloy target/copper alloy backing plate assembly in which the anti-eddy current characteristics and other characteristics required in a magnetron sputtering target are simultaneously pursued in a well balanced manner. This copper or copper alloy target/copper alloy backing plate assembly is used for magnetron sputtering, and the copper alloy backing plate is formed from low beryllium copper alloy or Cu—Ni—Si-based alloy. Further, with this copper or copper alloy target/copper alloy backing plate assembly, the copper alloy backing plate has electrical conductivity of 35 to 60% (IACS), and 0.2% proof stress of 400 to 850 MPa.

A write-once-read-many optical recording medium enabling excellent recording and reproducing properties at a wavelength of blue-laser wavelengths or shorter, i.e. 500 nm or less, particularly at wavelengths of near 405 nm and high density recording. To this end, a write-once-read-many optical recording medium of the invention comprises a recording layer using a material represented by BiOx (0<x<1.5), in which a recorded mark comprises crystal of Bi and/or crystal of a Bi oxide. Another write-once-read-many optical recording medium comprises a recording layer which comprises Bi, oxygen, and M (M represents at least one element selected from Mg, Al, Cr, Mn, Co, Fe, Cu, Zn, Li, Si, Ge, Zr, Ti, Hf, Sn, Mo, V, Nb, Y, and Ta), in which a recorded mark comprises crystal of the elements contained in the recording layer and crystal of an oxide of the elements.

A method of depositing a layer of a coating material (e.g., DLC protective overcoats of magnetic and magneto-optical recording media) on a surface of a substrate/workpiece, the layer including relatively thin and relatively thick regions defining a thickness gradient at a boundary therebetween, comprising steps of: (a) providing a filtered cathodic arc deposition (FCAD) process/treatment chamber comprising a FCAD source including means for providing a focused plasma beam containing ions of a coating material and means for scanning the plasma beam over a substrate/workpiece surface; (b) providing the process/treatment chamber with a substrate/workpiece including a surface for deposition thereon; and (c) forming on the surface a layer of coating material including the relatively thin and relatively thick regions defining the thickness gradient at the boundary therebetween by scanning the plasma beam over at least a portion of the surface.

The invention belongs to the field of luminescent materials, and discloses a preparation method for a gallium-doped zinc oxide transparent conducting film. The method comprises the following steps of: preparing a Ga2O3:ZnO ceramic target; performing vacuum treatment on a cavity of coating equipment; and adjusting parameters of a magneto-controlled sputter coating process, and coating a film. According to the prepared gallium-doped zinc oxide transparent conducting film, the used target is a single-Ga-component target, and the film with different Ga contents can be prepared by adjusting the parameters of the magneto-controlled sputter coating process; and the resistivity of the gallium-doped zinc oxide transparent conducting film is reduced and then increased along with the increasing of the Ga content; and when the Ga content is 4.6 weight percent, the lowest resistivity is 6.6*10<-4> Omega cm, and the average visible light transmissivity is more than 85 percent.

To provide a magnetron sputtering cathode, a magnetron sputtering apparatus, and a method of manufacturing a magnetic device, capable of generating a leakage magnetic field sufficiently large to form a magnetic tunnel necessary for discharge on the surface of a target even when the target is a magnetic body and thick and a ferromagnetic body is used as the target. The magnetron sputtering cathode of the present invention includes a target having a second annular groove provided on the sputtering surface of the target, a third annular projection provided on the non-sputtering surface of the target, a fourth annular groove provided outside the third annular projection on the non-sputtering surface, and a fourth annular projection provided outside the fourth annular groove on the non-sputtering surface. Further, the magnetron sputtering cathode includes a first magnet and a second magnet 6 having a polarity different from that of the first magnet on the non-sputtering surface side.

The objective of the invention is to provide an adhesion-prevention plate used for a vacuum film-forming device, a manufacturing method of the plate, a vacuum film-forming device adopting the adhesion-prevention plate and a vacuum film forming method, wherein the adhesion-prevention plate has good stripping preventing effects of a film forming material in a repeated evaporation circumstances. The adhesion-prevention plate is used for preventing adhesion of the film forming material to an unneeded position in the vacuum film-forming device, is made of aluminum, and comprises a surface of a concave-convex structure having concave parts with an average opening diameter being 0.01-9 [mu]m. A plurality of convex parts having an average height of 30-1000 [mu]m are arranged on the surface. The average density of the convex parts is higher than 10/10 mm<2>. The ratio of the bottom area of the convex parts is larger than 90% in a square area having a size of 10 mm.

The invention relates to a plating method for an anti-reflection film with high transmittance and low reflectivity, wherein the method is the key technology of window glasses and filters of digital cameras, and the technology can further be applied in fields of radiation protection glasses, thermal insulation glasses, window glasses, solar energy utilization and the like. The method comprises the following steps in vacuum plating equipment: (1) pumping vacuum; (2) heating; (3) cleaning ions (Ar and O2); (4) plating SiO2; (5) etching under full oxygen atmosphere (only introducing O2); (6) plating TiO2; and (7) etching under full oxygen atmosphere (only introducing O2), and repeated performing the steps of (4)-(7) until the film system is completed. According to the present invention, the transmittance of the anti-reflection film in the optical wavelength region of 400-700 nm is improved without improvement of vacuum plating equipment requirements, and the reflectivity is further reduced.

Disclosed is a simple method for manufacturing pure copper plates which does not involve cold forging or cold pressing after hot forging or hot pressing, or heat processing thereafter; also disclosed is the finely uniform pure copper plate which is obtained by said method, has low residual stress and excellent processability, and is especially suitable as a copper sputtering target material. Pure copper ingots of purity no less than 99.96 wt% are heated to 550-800 DEG C, and after hot pressing with a total press rates of 85% or more and a temperature at press completion of 500-700 DEG C, are quenched at a cooling rate of 200-1000 DEG C/min until the temperature reaches 200 DEG C or less from the aforementioned temperature at press completion.

An apparatus capable of dispensing drops of material with volumes on the order of zeptoliters is described. In some embodiments of the inventive pipette the size of the droplets so dispensed is determined by the size of a hole, or channel, through a carbon shell encapsulating a reservoir that contains material to be dispensed. The channel may be formed by irradiation with an electron beam or other high-energy beam capable of focusing to a spot size less than about 5 nanometers. In some embodiments, the dispensed droplet remains attached to the pipette by a small thread of material, an atomic scale meniscus, forming a virtually free-standing droplet. In some embodiments the droplet may wet the pipette tip and take on attributes of supported drops. Methods for fabricating and using the pipette are also described.

The invention discloses a method for preparing a micro-system radiating device, which is characterized by comprising: a first step of preparing a carbon nanotube array on a growth substrate; and a second step of depositing a metal anchored zone on the free end face of the carbon nanotube array, wherein the metal anchored zone consists of a plurality of layers of metals; the surface of the metal anchored zone abutted on the free end face of the carbon nanotube array is provided with a metal soakage layer; and the other parts of the metal anchored zone are provided with highly-heatconducting metals so as to obtain the micro-system radiating device. In the method, the metal soakage layer reacts with nanotubes to form metallic carbonates, so that better transitional crystal structures can be formed between the metal soakage layer and the nanotubes; and compared with a wet interface between the metal soakage layer and the carbone nanotubes, the transitional crystal structures can reduce the scattering of hot carriers, such as phonons, electrons and the like, thereby further reducing thermal contact resistance between the carbon nanotubes and a heat source.

The invention relates to a gallium nitride semiconductor film, a gallium nitride-based light emitting dioxide and a corresponding preparation method therefor. The preparation method for the gallium nitride semiconductor film comprises the following steps of: bombarding a gallium-containing target and a substrate by using double ion sources, respectively, and filling the primary ion source with argon to generate argon ion beams to bombard the gallium-containing target and generate sputtering particles which are deposited on the substrate; and filling the secondary ion source with ammonia or nitrogen to generate nitrogen ions to bombard the surface of the substrate, wherein the nitrogen ions are combined with the sputtering particles deposited on the surface of the substrate to generate the gallium nitride semiconductor film. According to the invention, the primary ion source generates the argon ions to bombard the gallium-containing target and the nitrogen ions generated by the secondary ion source generate gallium nitride by virtue of a chemical reaction, and the nitrogen ions are directly supplemented to the surface of the substrate by way of shallow injection, so that the content of element nitrogen in the gallium nitride semiconductor film can be effectively improved, and the proportioning error of the element nitrogen and the element gallium is overcome, and the prepared thin is uniform in thickness and high in precision.

The invention relates to manufacturing equipment, in particular to a structural design and use method of net tensioning equipment. The net tensioning equipment comprises a clamping jaw system, a measuring system, a welding system, a moving system, a pre-alignment table, a mask frame platform, a vibration reduction platform, a carrying system and a control unit, wherein the clamping jaw system comprises a clamping jaw platform, and multiple groups of clamping jaw main bodies, clamping jaw heads, sliding blocks, a stabilizing mechanism and an adsorption base which are positioned on the clampingjaw platform. The invention further provides a using method for tensioning the net by using the net tensioning equipment. According to the net tensioning equipment, displacement and rotation of the clamping mechanism in the net tensioning process can be eliminated through the interaction between the stabilizing mechanism and the adsorption base in the clamping jaw system, the net tensioning precision is improved, and the net tensioning efficiency and yield are improved.

The present invention provides a sputtering apparatus and a film forming method that can form a high quality film in a groove having a sloping wall such as a V-groove. The sputtering apparatus of the present invention includes a rotatable cathode (102), a rotatable stage (101), and a rotatable shield plate (105). The sputtering apparatus controls rotation of at least one of the cathode (102), the stage (101), and the shield plate (105) so that sputtering particles are incident on the V-groove formed in a substrate (104) at an angle of 50° or less with respect to a normal to a sloping wall of the V-groove.

The invention relates to a manufacturing method of a rare earth metal PrNd rotary target. The manufacturing method comprises the following steps: preparing rare earth metal PrNd powder, the average grain size D50 of which is 40-70[mu]m, by means of a hydrogenation dehydrogenization method-crushing method; in a protective atmosphere, filling a graphite mold of a vacuum hot pressing sintering furnace with the powder; in the protective atmosphere, carrying out hot press molding to obtain a rare earth metal PrNd target blank, wherein the hot pressing temperature is 760-900 DEG C and the molding pressure is 19-30MPa, and maintaining the temperature and pressure for 1-2 h; and machining the molded target and welding a copper or stainless steel back target. The target provided by the invention isused for improving the magnetic performance of a NdFeB magnet by grain boundary diffusion PrNd, the use level of rare earth elements can be reduced greatly, and the manufacturing cost of the high performance NdFeB magnet is saved.

The invention belongs to the technical field of solar energy utilization and particularly discloses a high-temperature-resisting multilayer solar selective absorbing coating and a preparing method thereof. The absorbing coating is composed of three layers, the top layer is a Cr2O3 reflection reducing layer, the middle layer is a CrAlON absorbing layer with the oxygen content as a gradual-changing structure, and the bottom layer is a CrAlSiN infrared reflecting layer. The CrAlON absorbing layer comprises the following ingredients of 30-36 at.% of Cr, 14-20 at.% of Al, 12-28 at.% of O and 22-38 at.% of N; and the oxygen content gradually increases from inside to outside. The CrAlSiN infrared reflecting layer comprises the following ingredients of 13-21 at.% of Cr, 30-40 at.% of Al, 6-10 at.% of Si and 32-40 at.% of N. The Cr2O3 top layer, the CrAlON middle layer with oxygen content as a gradual-changing structure and the CrAlSiN bottom layer of the coating all have good high temperature hardness and high-temperature oxidation resistance. The coating has the beneficial effects of being high in absorbing rate, low in emitting rate, high in combining strength and good in high-temperature stability. Furthermore, the coating can still have good spectral selection absorbing performance in the temperature of 550 DEG C.

A sputtering target including an oxide that, includes an indium element (In), a tin element (Sn), a zinc element (Zn) and an aluminum element (Al), and including a homologous structure compound represented by InAlO₃ZnO)_m (m is 0.1 to 10), wherein the atomic ratio of the indium element, the tin element, the zinc element and the aluminum element satisfies specific requirements.