Graphene processing for device and sensor applications

a technology of graphene and sensor, applied in the direction of instruments, transportation and packaging, coatings, etc., can solve the problems of difficult control of the number of graphene layers and grain sizes, limited to the tedious fabrication of devices for research purposes, and the difficulty inherent in the method of dispersing graphene in solution separation of layers without breaking layers

Inactive Publication Date: 2012-01-05
UNIV OF FLORIDA RES FOUNDATION INC
View PDF3 Cites 61 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Benefits of technology

This patented method allows for creation of supportive graphite films without damaging them during manufacturing processes. It involves growing tiny crystal structures called lattice planes onto a special material like silicon carbide (SiC) instead of just adding atoms between it's constituents. These small crystals help make up defects caused due to imperfections present inside they. By doing this, these materials have improved mechanical properties such as strength and durability compared to traditional ceramics made through sintering techniques alone.

Problems solved by technology

Technologies related to graphene include electronics, quantum mechanisms, transistor structures, chemistry, magnetic energy storage, hydrogen fuel cells, etc., among others. These technologies require precise control over how well they form graphenes and other nanostructures such as carbon monoxanes calledgraphane. Existing processes involve expensive steps like burning graphites, lithography, and ionizing radiation exposure. Therefore there needs a more efficient process for producing graphene suitable for various applications while maintaining consistency between different forms within each unit cell.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Graphene processing for device and sensor applications
  • Graphene processing for device and sensor applications

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0010]One embodiments of the invention is directed to methods for fabricating graphene layers of a controlled-thickness over large areas on a substrate. Another embodiment of the invention is directed to methods for fabricated patterned graphene layers of a controlled-thickness. Other embodiments of the invention are directed to devices useful for sensor or other applications that are formed by these methods of forming graphene layers. The devices can be fabricated using conventional semiconductor technologies or ion beam processing methods, see for example Ion Implantation and Beam Processing, J. S. Williams et al., ed., Academic Press 1984, where the graphene layers form single device features or integrated circuits.

[0011]In one embodiment of the invention, solid phase epitaxy (SPE) is employed on a substrate that has ion implanted carbon. By heating a single crystalline carbon implanted silicon or germanium in the volume near the surface to elevated temperatures, for example 500° C.

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

PropertyMeasurementUnit
Temperatureaaaaaaaaaa
Thicknessaaaaaaaaaa
Volumeaaaaaaaaaa
Login to view more

Abstract

A supported graphene device comprises at least one graphene feature of 1 to about 10 graphene layers having a predetermined shape and pattern, with at least a portion of each graphene feature being supported on a substrate. In some embodiments the device comprises graphene features supported on crystalline semiconductor substrate, such as silicon or germanium. The graphene features on a crystalline semiconductor substrate can be fabricated by forming an amorphous carbon doped semiconductor on the crystalline semiconductor substrate and then epitaxially crystallizing the amorphous semiconductor with carbon migration to the surface to form a graphene feature of one or more graphene layers. The epitaxy can be promoted by heating the device or by irradiation with a laser. Methods for fabricating graphene on a variety of substrates, over large areas with controlled thicknesses employ ion implantation or other doping techniques followed by pulsed laser annealing or other annealing techniques that result in solid phase regrowth are presented.

Description

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Owner UNIV OF FLORIDA RES FOUNDATION INC
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap