32results about How to "Improve conversion efficiency" patented technology

The invention discloses a monocrystalline silicon surface composite microstructure based on full-band anti-reflection and a preparation method of the monocrystalline silicon surface composite microstructure. The preparation method comprises a part of or all of the following steps (1) - (4), and each step is executed for one or more times: (1) carrying out hydrophilic treatment on a silicon wafer,preparing a polystyrene sphere mixed solution, and paving a mask, polystyrene spheres, on the surface of the silicon wafer; (2) introducing oxygen for etching the wafer, and then introducing sulfur hexafluoride and octafluorocycloalkane for an etching-passivation-etching circulation to obtain monocrystalline silicon with a nano-pillar structure; (3) soaking the monocrystalline silicon with the nano-pillar structure into an acidic etching solution containing silver nitrate for surface corrosion to obtain monocrystalline silicon with a nano pencil-shaped structure; (4) carrying out magnetron sputtering on the monocrystalline silicon with the microstructure for plating an anti-reflection layer on the front surface, or the back surface or both, of the monocrystalline silicon. According to theinvention, the anti-reflection effect on full-band solar energy is effectively improved, so that the conversion efficiency of the solar cell is improved.

The invention discloses a terahertz wave radiation source based on a graphene material, relates to a terahertz emission source, and belongs to the technical field of terahertz waves. The basic main body material is graphene and a modified graphene material thereof. The main structure mainly comprises three parts, namely, a semiconductor base layer constructed by graphene and the modified graphenematerial thereof, a transition transmission interaction layer formed by a transition metal compound, and a graphene magnetic field emission layer formed by graphene and a composite material thereof. The invention provides a real terahertz wave source, the output frequency completely covers the terahertz wave range of 0.1-10THz, and terahertz waves with the average power of milliwatts can be emitted even under the 24V direct-current voltage. The radiation source is simple in structure, light, high in thin film degree, wide in working range, high in conversion efficiency far superior to that ofthe existing terahertz wave radiation source and completely suitable for large-scale production and application, and has far-reaching influence on expanding the cognitive dimension and depth in the fields of spectroscopy, material science, biology, medical imaging, environmental science, information science, astrophysics, plasma physics and the like.

The invention discloses an N-type nanometer black silicon manufacturing method and a solar cell manufacturing method. The N-type nanometer black silicon manufacturing method comprises steps that: (1), silicon chips after cleaning react in mixed solution of KOH and isopropanol for 0.5-2 hours, and the reaction temperature is 60-100 DEG C; and (2), the N-type silicon chips treated in the step (1) are put in a silver nanometer particle solution for 20-30 minutes in a standing mode, after drying, corrosion treatment on the treated N-type silicon chips is carried out to acquire the N-type nanometer black silicon. For manufacturing a solar cell, an N+ layer, a silicon nitride layer and an electrode layer are sequentially formed at the front surface of the manufactured N-type nanometer black silicon, after sintering, the N-type nanometer black silicon solar cell is manufactured. The manufactured N-type nanometer black silicon solar cell has properties of low reflectivity and high carrier service life and has the conversion efficiency 2.2% higher than that of a cell manufactured through a routine method.

The method relates to a method using thallus whole cells to catalyze arginine to convert into agmatine and belongs to the technical field of bioengineering. The method includes: preparing whole-cell arginine decarboxylase concentrate, mixing the whole-cell arginine decarboxylase concentrate with initial conversion liquid, converting, crystalizing and recrystallizing. The method has the advantages that by controlling the carbon source, nitrogen source and dissolved oxygen during fermentation induction, the obtained arginine decarboxylase genetically engineered thallus whole-cell concentrate is high in arginine catalytic conversion efficiency; the concentrate does not contain byproducts, so that the agmatine obtained by conversion can be conveniently crystalized and purified; the thallus whole-cell concentrate is short in fermentation period, a large amount of the thallus whole-cell concentrate can be obtained in a short time, and large-scale preparation of the agmatine is benefited; agmatine product concentration on conversion liquid is 200-300g/L, conversion rate is 92-99%, agmatine product purity can reach 97-100%, and product yield can reach 90-100%.

The invention discloses a silicon slice detergent and a preparation method thereof. The silicon slice detergent is prepared from the following components by concentration: 0.5-10 g/L of citric acid, 0.5-5 g/L of tartaric acid, 0.5-5 mL/L of hydrofluoric acid, 0.5-15 g/L of coconut oil alkylolamide phosphate, 0.5-15 g/L of octylphenol polyoxyethylene ether and the balance of water. The preparation method of the silicon slice detergent comprises the following steps: (1) adding and dissolving the citric acid and the tartaric acid into the water according to a formula to obtain a solution A; (2) subsequently adding and dissolving the hydrofluoric acid into the water according to the formula to obtain a solution B; (3) subsequently adding and dissolving the coconut oil alkylolamide phosphate and the octylphenol polyoxyethylene ether into the water according to the formula to obtain a solution C; and (4) finally uniformly mixing the three solutions to obtain the silicon slice detergent. The silicon slice detergent disclosed by the invention can be used for effectively reducing the concentration of metal ions on the surface of a washed silicon slice, so that the transformation efficiency of a battery is improved effectively.

The invention discloses a fundamental frequency light seed injected narrow linewidth inner cavity Raman laser. A laser gain medium absorbs pumping light to form population inversion so as to generate laser gain, and thus 1064nm fundamental frequency laser oscillation formed under positive feedback effect of a laser resonant cavity composed of a resonant cavity reflecting mirror, a resonant cavity folded mirror and an output mirror; a fundamental frequency light seed source emits 1064nm single frequency seed light which enters the laser resonant cavity after passing through the isolator and being focused by a seed light coupling lens and reflected by a beam splitter; the single frequency seed light is effectively coupled into the laser resonant cavity to achieve seed injection; when 1064 fundamental frequency laser passes through a laser gain medium and a Raman gain medium, Raman gain is generated, when the Raman gain is larger than loss of the Stokes resonant cavity composed of the resonant cavity reflecting mirror, the resonant cavity folded mirror and the output mirror, stimulated Raman scattering occurs, and stable 1176nm Stokes light oscillation is formed in the Stokes resonant cavity.

The invention discloses a charge-discharge circuit and a power bank. The charge-discharge circuit comprises a charging interface, a discharging interface and a plurality of battery cells; the battery cells are divided into M groups; the battery cells in every group are in parallel connection; power source input pins of M groups of charging chips are connected with the charging interface; power source output pins are correspondingly connected with positive electrodes of the M groups of battery cells; the M groups of battery cells are in parallel connection during charging and in series connection during discharging; the positive electrodes of the first group of battery cells are connected with a voltage input end of a voltage reducing chip; a voltage output end of the voltage reducing chip is connected with the discharging interface through a switch circuit; the switch circuit enables the voltage reducing chip and the discharging interface to be communicated when the charging interface has no power source access. According to the power bank, a BOOST boosting circuit in a traditional circuit can be replaced by the voltage reducing chip to satisfy a conversion request between output voltage of the battery cells and power supply required by external terminal equipment by changing connection relationships of the battery cells during the charging and discharging processes and accordingly the conversion efficiency and the use ratio are improved.

Provided are a solar battery of a localized emitter region structure and a production method thereof. The invention relates to a solar battery. The solar battery of the localized emitter region structure is provided with a substrate, the surface of the substrate extends to form an intrinsic semiconductor, a groove is disposed on the intrinsic semiconductor, a semiconductor layer is formed in the groove by using the method of diffusion or extension or the like, an electrode and an antireflection film are respectively evaporated on the semiconductor layer, and a back electrode is evaporated on the bottom of the substrate. When the substrate is a p-type semiconductor layer, the semiconductor layer is an n-type semiconductor layer; when the substrate is an n-type semiconductor layer, the semiconductor layer is a p-type semiconductor layer. The intrinsic semiconductor is led to grow on the substrate. A shielding layer is arranged on a sample in a thermal growth or deposition mode. Graphics are carved on the sample, the shielding layer is removed, and the groove is carved out. The semiconductor layer is formed in the groove, and the shielding layer is removed to form an emitter region. A top electrode is deposited and peeled. After reverse graphics of the top electrode is carved on the upper surface of the sample, the antireflection film is deposited and peeled. The back electrode is deposited on the back of the sample.

The invention discloses a constant current DC (Direct Current)-DC converter utilizing digital PWM (Pulse-Width Modulation) control and a constant current LED (Light Emitting Diode) drive DC-DC converter. The constant current DC-DC converter utilizing digital PWM control comprises a power level and a digital PWM control level which are electrically connected, as well as a constant current control level electrically connected with the power level and the digital PWM control level respectively. The constant current DC-DC converter utilizing digital PWM control and the constant current LED drive DC-DC converter disclosed by the invention can overcome defects in the prior art, such as complex structure, high cost, large power consumption and low conversion efficiency, so as to realize the advantages of simple structure, low cost, small power consumption, good constant current effect and high conversion efficiency.

The invention discloses a thermal field structure for casting a polycrystalline silicon ingot. The thermal field structure comprises a quartz crucible, thermal baffles, heaters, thermal insulating layers and a heat exchange table, wherein the quartz crucible is arranged on the heat exchange table, the thermal baffles are arranged at the periphery of the quartz crucible and are fixed at the bottoms of the side thermal insulating layers, the upper thermal insulating layer and the lower thermal insulating layer are respectively arranged above and below the quartz crucible, the side heaters are arranged between the thermal baffles and the side thermal insulating layers, and the upper heater is arranged between the upper thermal insulating layer and the quartz crucible. The thermal baffles added at the periphery of the quartz crucible enable a long crystal solid liquid interface to be always under the protection of the thermal baffles, reduce the thermal impact of the heaters on a crystal growth interface, and enable crystals to stably grow and inhibit the occurrence of crystal defects; and in the growth process of the crystals, the radiation of the heaters on a solidified silicon ingot is reduced, the latent heat of crystallization is facilitated to be transferred to the heat exchange tale through a solidification part, and the vertical growth of grains is facilitated, thus the conversion efficiency of a polycrystalline silicon solar cell can be effectively improved.

The invention discloses a method for preparing a resveratrol dimer. The method is characterized by comprising the following steps of: dissolving resveratrol into acetone or ethyl acetate solution, adding immobilized laccase into the solution, reacting the solution for 1 to 5 hours at the temperature of between 35 and 45 DEG C, and then performing solid-liquid separation; and adding the solid phase containing the immobilized laccase into the reaction substrate for continuous reaction and reuse, depositing protein in the collected reaction solution by using an organic solvent or a neutral salt, concentrating the liquid phase after solid-liquid separation, adding ethyl acetate into the concentrate for extracting, concentrating the extract, and drying the concentrate to obtain the resveratrol dimer. By adopting the immobilized laccase for the synthesis of the resveratrol dimer, the synthesis time can be greatly shortened (from 24 hours to 1-4 hours), the conversion efficiency is remarkably improved (from 18-21 percent to 35-38 percent), and the effect is remarkable.

The invention relates to a method for producing a novel CdS-CdZnTe thin-film solar cell. According to the method, a certain amount of zinc is doped through a two-step zinc doping method, the zinc content in a thin film is easy to control, zinc distribution which is beneficial to improving the performance of the solar cell is obtained, the thin film around a back contact has a high zinc content, and the effect similar to an intermediate layer is achieved, so that the overall efficiency of the solar cell is improved.

The invention provides an automatically-directed power-switching circuit with an output protection function. The automatically-directed power-switching circuit mainly solves the problems that an existing low-voltage new-energy power converter is high in power consumption, low in efficiency and poor in reliability, and comprises a reverse isolation circuit and an output protection circuit. The output end of the reverse isolation circuit is connected with a load through an energy storage filter circuit, the input end of the reverse isolation circuit is connected with the output end of a VMOS switch circuit, and the input end of the VMOS switch circuit is connected with the output end of an input power through a follow-current inductor; the reverse isolation circuit is composed of a VMOS tube group which is used for synchronous rectification with the VMOS switch circuit, and the VMOS tube group is synchronously driven by a drive signal synthesis circuit through a follow-current drive circuit; the output protection circuit can guarantee that the BOOST output can be automatically adjusted when short circuit of the load happens, current-limiting output is achieved, and low power consumption is also guaranteed.

The invention discloses a bidirectional inverter circuit system for reducing power consumption and improving conversion efficiency, comprising a power circuit and a control circuit, wherein the powercircuit adopts bidirectional AC-DC cascade, and the power circuit is composed of an LCL filter circuit and an IGBT circuit, the control circuit includes an FPGA, DSP, AD sampling chip, PWM module andrelay control module, the DSP is connected with the FPGA through the XINTF external interface, As that analog RAM in the FPGA reach the communication module with the DSP, DSP uses XINTF (External Interface), FPGA is regarded as a RAM, the timing of selecting, reading and writing RAM is sent out on DSP, FPGA simulates the corresponding receiving timing, the address line is used as the distinction between reading and writing, and then the contents on the data line are read or written. The power circuit adopts bidirectional AC-DC structure, the structure is very simple, so the manufacturing costis low, and maximizes the use of various components, using FPGA to control the AD7606 AD conversion, DSP directly read data in FPGA, high sampling efficiency.