Solar cell and method of manufacture thereof, and solar cell module

a solar cell and module technology, applied in the field of solar cells, can solve the problems of increasing the resistance of the collecting electrode, the increase of the internal resistance of the solar cell, and the high material cost of silver, so as to improve the conversion efficiency of the solar cell and achieve the effect of low resistance, high efficiency and low cos

Active Publication Date: 2013-11-28
KANEKA CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Benefits of technology

The present invention provides an improved method for forming a collecting electrode on a solar cell using a plating method. This method reduces the resistance of the collecting electrode, leading to increased conversion efficiency of the solar cell. The existing method required a patterning process for the insulating layer, which was costly. The new method allows for the formation of a pattern electrode without using a mask or resist, resulting in a more efficient solar cell that is more affordable.

Problems solved by technology

However, since conductive oxide, such as indium tin oxide (ITO) or zinc oxide, forming the transparent electrode layer has a resistivity higher than that of metal, there is such a problem that the internal resistance of the solar cell increases.
This method is simple in terms of the process itself, but has such a problem that the material cost of silver is high, and that the resistivity of the collecting electrode increases because a silver paste material containing a resin is used.
However, since the line width of the electrode increases with the increase of the print thickness, thinning of the electrode is difficult, and the shading loss by the collecting electrode increases.

Method used

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Examples

Experimental program
Comparison scheme
Effect test

example 1

[0136]A heterojunction solar cell of Example 1 was manufactured in the following manner.

[0137]An n-type single-crystal silicon wafer having a light incident surface direction identical to the (100) surface and having a thickness of 200 μm was provided as a single-crystal silicon substrate of a first conductivity type. The silicon wafer was immersed in a 2 wt % aqueous HF solution for 3 minutes to remove silicon oxide covering on the surface, and thereafter rinsed twice with ultrapure water. The silicon substrate was immersed in a 5 / 15 wt % aqueous KOH / isopropyl alcohol solution held at 70° C. for 15 minutes, and the surface of the wafer was etched to form a textured surface. Thereafter, the wafer was rinsed twice with ultrapure water. The surface of the wafer was observed using an atomic force microscope (AFM manufactured by Pacific Nanotechnology, Inc.), and it was confirmed that the surface of the wafer was mostly etched, and a pyramidal texture surface exposed at the (111) plane ...

examples 2 to 4

[0147]A heterojunction solar cell was prepared in the same manner as in Example 1 except that the ratio of a metallic material powder to a silver powder in the printing paste for forming the first electroconductive layer 71 was changed as shown in Table 1.

examples 5 and 6

[0148]A heterojunction solar cell was prepared in the same manner as in Example 1 except that the thickness of the insulating layer 9 was changed as shown in Table 1.

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PUM

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Abstract

Disclosed is a solar cell having a collecting electrode on one main surface of a photoelectric conversion section. The collecting electrode includes a first electroconductive layer and a second electroconductive layer in this order from the photoelectric conversion section side, and further includes an insulating layer between the first electroconductive layer and the second electroconductive layer. The first electroconductive layer includes a low-melting-point material, and a part of the second electroconductive layer is conductively connected with the first electroconductive layer through, for example, an opening in the insulating layer. The second electrode layer is preferably formed by a plating method. In addition, it is preferable that before forming the second electroconductive layer, annealing by heating is carried out to generate the opening section in the insulating layer.

Description

TECHNICAL FIELD[0001]The present invention relates to a solar cell and a method of manufacture thereof. Further, the present invention relates to a solar cell module.BACKGROUND ART[0002]Since energy issues and global environmental issues are becoming more serious, solar cells are receiving more attention as an alternative energy for replacing fossil fuels. In the solar cell, carriers (electrons and holes) generated by light irradiation to a photoelectric conversion section composed of a semiconductor junction or the like are extracted to an external circuit to generate electricity. A collecting electrode is provided on the photoelectric conversion section of the solar cell for efficiently extracting carriers generated at the photoelectric conversion section to the external circuit.[0003]For example, in a crystalline silicon-based solar cell using a single-crystal silicon substrate or a polycrystalline silicon substrate, a collecting electrode made of a slender metal is provided on a...

Claims

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Application Information

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Patent Type & Authority Applications(United States)
IPC IPC(8): H01L31/0224
CPCH01L31/022425Y02E10/542Y02P70/50H01L31/04H01L31/18H01L31/022475H01L31/0445
Inventor ADACHI, DAISUKEYAMAMOTO, KENJIHERNANDEZ, JOSE LUISVALCKX, NICK
Owner KANEKA CORP
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