4 results about "Conductive oxide" patented technology

Thin film photovoltaic devices are generally provided. In one embodiment, the device includes a high index layer (e.g., having a refractive index of about 2 or more) on a glass substrate and a low index layer (e.g., having a refractive index of about 1.5 or less) on the high index layer. A transparent conductive oxide layer is positioned on the low index layer, and a photovoltaic heterojunction (e.g., a cadmium sulfide layer and a cadmium telluride layer) is positioned on the transparent conductive oxide layer. In an alternative embodiment, the device can include the low index layer on the glass substrate and the high index layer on the low index layer. Methods are also generally provided for manufacturing such thin film photovoltaic devices.

The invention discloses a planar undoped heterojunction-perovskite laminated cell and a preparation method thereof, and relates to the technical field of solar cells. The cell comprises a perovskite top-layer solar cell and a heterojunction bottom-layer solar cell which are connected together, wherein the perovskite top-layer solar cell comprises a front metal electrode layer, a first transparentconductive oxide layer, a hole transport layer, a perovskite light absorption layer and an electron transport layer which are sequentially arranged from top to bottom; the perovskite light absorptionlayer comprises a perovskite layer A, a perovskite layer B and a perovskite layer C which are sequentially arranged from top to bottom; the forbidden band width of the perovskite layer A is 2.4 to 3.0ev; the forbidden band width of the perovskite layer B is 2.0-2.6 ev, the forbidden band width of the perovskite layer C is 1.9-2.2 ev; and the forbidden band widths of the perovskite layer A, the perovskite layer B and the perovskite layer C are sequentially reduced. The perovskite solar cell has the advantages that the photoelectric conversion efficiency exceeds 28%, the open-circuit voltage ishigh, and the generating capacity is increased.

The invention discloses a complementary type resistive random access memory and preparation method thereof. The complementary type resistive random access memory includes a bottom layer conductive oxide electrode, a CuO storage medium layer arranged on the upper surface of the bottom layer conductive oxide electrode and a ZrO storage medium layer arranged on the upper surface of the CuO storage medium layer. The method is as follows: direct current magnetron sputtering is adopted to prepare a conductive oxide thin film on a Si substrate, magnetron sputtering is adopted to prepare a CuO storage medium layer on the upper surface of the conductive oxide thin film, magnetron sputtering is adopted to prepare a ZrO storage medium layer on the upper surface of the CuO storage medium layer, and magnetron sputtering is adopted to prepare a W electrode on the upper surface of the ZrO storage medium layer. The complementary type resistive random access memory structure solves the problem of crosstalk of a cross array resistive random access memory without additionally using a diode or triode, and has the characteristic that a circuit is simple.