GaInNAs material-containing multi-junction solar cell and preparation method thereof

一种太阳能电池、子电池的技术，应用在电路、光伏发电、电气元件等方向，能够解决少子扩散长度小等问题，达到提高转换效率的效果

Active Publication Date: 2016-12-21
ZHONGSHAN DEHUA CHIP TECH CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0007] The purpose of the present invention is to overcome the deficiencies and shortcomings of the prior art, to provide a multi-junction solar cell containing GaInNAs material and its preparation method, which can satisfy the theory of multi-junction cell bandgap combination on the basis of ensuring lattice matching Design requirements, and can solve the problem of small minority carrier diffusion length of GaInNAs materials, maximize the advantages of multi-junction cells, and improve cell conversion efficiency

Method used

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Embodiment 1

[0046] Embodiment 1 (three-junction solar cell)

[0047] Such as image 3 As shown, the triple-junction solar cell structure described in this embodiment includes an n-type substrate, and the n-type substrate is an n-type Ge substrate. There are back-junction GaInNAs sub-cells, GaAs sub-cells and GaInP sub-cells. The three-junction sub-cells are stacked in series in the order of increasing band gap. The junction cells are connected through tunnel junctions. The transparent film is prepared with a front electrode on the anti-reflection film, and a back electrode is prepared under the n-type substrate.

[0048] The structure of the back-junction GaInNAs sub-cell includes, from bottom to top, an n-type back field layer, an n-type GaInNAs material layer, an unintentionally doped GaInNAs material layer, and a p-type window layer stacked in sequence. The total thickness of the GaInNAs sub-battery is 1200-1800nm.

[0049] The total thickness of the GaAs sub-cell is 2000nm, and the...

Embodiment 2

[0065] Embodiment 2 (four-junction solar cell)

[0066] Such as Figure 4 As shown, the four-junction solar cell structure described in this embodiment includes an n-type substrate, and the n-type substrate is an n-type GaAs substrate. On the n-type substrate, according to the layered superposition structure from bottom to top GaAs / InAs quantum dot sub-cells, back-junction GaInNAs sub-cells, GaAs sub-cells and GaInP sub-cells are set up, and the four-junction sub-cells are stacked in series in the order of increasing band gap, and the junction cells are connected through tunnel junctions. An anti-reflection film is prepared on the top cell, a front electrode is prepared on the anti-reflection film, and a back electrode is prepared under the n-type substrate.

[0067] The total thickness of the GaAs / InAs quantum dot battery is 400-600nm, and the optical band gap is 0.7eV.

[0068] The structure of the back-junction GaInNAs sub-cell includes an n-type back field layer, an n-ty...

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PUM

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Abstract

The invention discloses a GaInNAs material-containing multi-junction solar cell and a preparation method thereof. The solar cell comprises an n-type substrate; at least three sub-cells are sequentially arranged on the n-type substrate from bottom to top according to a layered superposition structure; all the sub-cells are staked sequentially in a series connection manner according to a bandgap increase order; the sub-cells are connected through tunnel junctions; an antireflection film is prepared on the top cell; a front-surface electrode is prepared on the antireflection film; a back-surface electrode is prepared under the n-type substrate; at least one of the sub-cells is a back junction type GaInNAs sub-cell with a graded bandgap structure; and the back junction type GaInNAs sub-cell includes an n-type back field layer, an n-type GaInNAs material layer, an unintentionally-doped GaInNAs material layer and a p-type window layer which are superimposed successively from bottom to top. With the GaInNAs material-containing multi-junction solar cell and the preparation method thereof of the invention adopted, the theoretical design requirement of the bandgap combination of the multi-junction cell can be satisfied, the problem of small diffusion length of the minority carriers of a GaInNAs material can be solved, and the conversion efficiency of the cell can be improved.

Description

technical field [0001] The invention relates to the field of solar cell design, in particular to a multi-junction solar cell containing GaInNAs material and a preparation method thereof. Background technique [0002] Solar cells are physical devices that use the photovoltaic effect of semiconductor materials to collect photons in the solar spectrum and convert their energy into electrical energy. The solar spectrum is continuous and unevenly distributed. The basic principle of high-efficiency photoelectric conversion is to ensure that photons of different wavelengths can be absorbed and converted into current, thereby ensuring the number of photons. The ground absorbs photons to ensure that the energy loss of photons of different wavelengths is small. The conversion efficiency of high-efficiency multi-junction solar cells based on III-V compound semiconductor materials far exceeds that of other known photovoltaic cells. At present, the most mature high-efficiency multi-junc...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/065H01L31/068H01L31/0687H01L31/0304H01L31/18
CPCH01L31/03046H01L31/065H01L31/0682H01L31/0687H01L31/184Y02E10/544Y02E10/547Y02P70/50
Inventor 张小宾黄珊珊马涤非吴波潘旭张杨杨翠柏
Owner ZHONGSHAN DEHUA CHIP TECH CO LTD
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