7 results about "Compound semiconductor" patented technology

A method for growing a crystal of an Al-containing III-V group compound semiconductor by the conventional HVPE method, characterized in that it comprises a step of reacting Al with hydrogen halide at a temperature of 700° C. or lower to form a halide of Al. The method has allowed the suppression of the formation of aluminum chloride (AlCl) or aluminum bromide (AlBr) reacting violently with quartz, which is the material of a reaction vessel for the growth, resulting in the achievement of the vapor phase growth of an Al-containing III-V group compound semiconductor at a rate of 100 microns/hr or more, which has lead to the mass-production of a substrate and a semiconductor element having satisfactory resistance to adverse environment.

A semiconductor device includes a compound semiconductor substrate, a channel layer provided on the compound semiconductor substrate, a buried layer provided on the channel layer, a first recess formed in the buried layer in an E-mode region, a second recess formed in the first recess in the E-mode region and another second recess formed in the buried layer in a D-mode region, and a gate electrode provided in the second recess in the E-mode region and another gate electrode provided in the second recess in the D-mode region, and a distance between a surface of the buried layer and a bottom of the second recess in the E-mode region is shorter than another distance between another surface of the buried layer and a bottom of said another second recess in the D-mode region.

A manufacture method that can manufacture ZnO based compound semiconductor crystal of good quality. A ZnO substrate is prepared to have a principal surface made of a plurality of terraces of (0001) planes arranged stepwise along an m-axis direction, the envelop of the principal surface being inclined relative to the (0001) plane by about 2 degrees or less. ZnO based compound semiconductor crystal is grown on the principal surface.

The invention relates to the technical field of semiconductors, and provides a compound semiconductor silicon-based mixer device and a preparation method thereof. The preparation method comprises thesteps of sequentially forming a sacrificial layer and a semiconductor function layer on a first substrate to form a first component, dividing a second substrate into an optical waveguide region and abonding region, forming an optical waveguide structure on the optical waveguide region, forming an alignment assembly in the bonding region, forming a bonding boss on the surface of the bonding region; arranging a first component on the bonding region, wherein the semiconductor function layer is bonded with the bonding boss, and the side wall, close to the optical waveguide region, of the semiconductor function layer is coupled with the end surface of the optical waveguide structure. According to the method, the problem of accurate alignment (namely passive alignment in the vertical directionand the horizontal direction) of the semiconductor function layer and the optical waveguide structure can be avoided. In addition, the integration degree of the semiconductor device and the coupling degree of the compound semiconductor photoelectric device and a silicon-based optical waveguide are improved, and the production efficiency is improved.

In the process for production of a gallium nitride-based compound semiconductor light emitting device, when an n-type semiconductor layer, a light emitting layer obtained by alternately stacking an n-type dopant-containing barrier layer and a well layer, and a p-type semiconductor layer, composed of gallium nitride-based compound semiconductors, are grown in that order on a substrate, the ratio of the supply rates of n-type dopant and Group III element during growth of the barrier layer (M/III) is controlled to a range of 4.5×10⁻⁷≦(M/III)<2.0×10⁻⁶ in terms of the number of atoms.

The invention relates to the non-plane chip and telluride solar cell in photoelectric technology field. Wherein, it treats the cell substrate into the required non-plane structure, and applies film material contained at least one telluride to prepare the final product. This cell can absorbe and transfer sunlight from different directions furtherest. This invention is low cost fit to spread.

The invention provides a silicon-based optoelectronic monolithic heterogeneous integration method, and relates to the technical field of silicon-based photonic integration. A III-V compound semiconductor and a silicon-based optoelectronic device are subjected to monolithic integration based on a silicon-based optoelectronic platform, and the method can be applied to the field of photoelectric microsystem application. The invention provides the monolithic heterogeneous integration method based on the silicon substrate, aiming at the urgent demand of the development trend of miniaturization, integration and multi-functionalization of a photoelectric microsystem for monolithic integration of active and passive semiconductor photonic devices of different material systems. By using the method, heterogeneous integration of active photoelectric devices such as a laser, a modulator and a detector and passive photoelectric devices such as a beam splitter, a coupler and an optical microcavity on the same silicon wafer platform can be realized.