Silicon-based photoelectron monolithic heterogeneous integration method

An integrated method and optoelectronic technology, applied in optics, light guides, optical components, etc., can solve the problems of unindustrialization and unsurpassed performance, and achieve the effect of retaining performance, good reliability and simple process

Active Publication Date: 2021-05-07
HUAZHONG PHOTOELECTRIC TECH INST (CHINA SHIPBUILDING IND CORP THE NO 717 INST)
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Benefits of technology

This invention provides an improved way to make electronic devices that are more efficient at processing data faster than traditional methods like lenses or filters. By integrating multiple materials onto one piece of semiconductor wafer instead of requiring complicated processes involving other layers such as metal interconnectors, this technology can be made easier and reliable compared with current techniques.

Problems solved by technology

This patents describes how it's possible to integrate various types of electronic components onto one piece of Si called LSI wafers while maintaining high efficiency and accuracy. Current methods involve bonding separate pieces together but this limits productivity due to slow down times needed during production. To address these issues, research into hybrid technologies involving combining two different materials at once becomes more important because they offer better functionality compared to just adding each component separately.

Method used

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  • Silicon-based photoelectron monolithic heterogeneous integration method
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  • Silicon-based photoelectron monolithic heterogeneous integration method

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Embodiment Construction

[0040] In order to make the purpose, technical solutions and advantages of the embodiments of the present invention clearer, the technical solutions in the embodiments of the present invention will be clearly and completely described below in conjunction with the drawings in the embodiments of the present invention. Obviously, the described embodiments It is a part of embodiments of the present invention, but not all embodiments. Based on the embodiments of the present invention, all other embodiments obtained by persons of ordinary skill in the art without creative efforts fall within the protection scope of the present invention.

[0041] Reference herein to an "embodiment" means that a particular feature, structure, or characteristic described in connection with the embodiment can be included in at least one embodiment of the present application. The occurrences of this phrase in various places in the specification are not necessarily all referring to the same embodiment, nor

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Abstract

The invention provides a silicon-based optoelectronic monolithic heterogeneous integration method, and relates to the technical field of silicon-based photonic integration. A III-V compound semiconductor and a silicon-based optoelectronic device are subjected to monolithic integration based on a silicon-based optoelectronic platform, and the method can be applied to the field of photoelectric microsystem application. The invention provides the monolithic heterogeneous integration method based on the silicon substrate, aiming at the urgent demand of the development trend of miniaturization, integration and multi-functionalization of a photoelectric microsystem for monolithic integration of active and passive semiconductor photonic devices of different material systems. By using the method, heterogeneous integration of active photoelectric devices such as a laser, a modulator and a detector and passive photoelectric devices such as a beam splitter, a coupler and an optical microcavity on the same silicon wafer platform can be realized.

Description

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Claims

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Application Information

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Owner HUAZHONG PHOTOELECTRIC TECH INST (CHINA SHIPBUILDING IND CORP THE NO 717 INST)
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