Compound semiconductor silicon-based mixer device and preparation method thereof

[0037] An embodiment of the present invention provides a method for preparing a compound semiconductor silicon-based hybrid device, which is used to prepare a silicon-based compound semiconductor hybrid integrated device, such as figure 1 Shown, this preparation method comprises the following steps:

[0038] Step S11 , sequentially forming a sacrificial layer and a semiconductor functional layer on the first substrate to form a first component.

[0039] Such as figure 2 As shown, a sacrificial layer 12 is first grown on a first substrate 11 by molecular beam epitaxy (Molecular Beam Epitaxy, referred to as MBE) or metal-organic chemical vapor deposition (Metal-organic Chemical Vapor Deposition, referred to as MOCVD). A semiconductor functional layer (light gain and absorption structures such as semiconductor lasers, semiconductor optical amplifiers, and semiconductor photodetectors) 13 is grown on the layer 12 to form a first component. However, the protection scope of the pres

[0072] An embodiment of the present invention provides a silicon-based compound semiconductor hybrid integrated device, which is prepared by using the method for preparing a compound semiconductor silicon-based hybrid device in Embodiment 1 of the present invention.

[0073] For details of the structure of the compound semiconductor bulk silicon-based hybrid device not specifically described in this embodiment, please refer to Embodiment 1, and details will not be repeated here.