Process for production of gallium nitride-based compound semiconductor light emitting device

a gallium nitride and light-emitting device technology, which is applied in the manufacture of semiconductor/solid-state devices, semiconductor devices, electrical equipment, etc., can solve the problems of inability to achieve high light emission intensity, side effects of requiring a higher driving voltage, and the relationship between this ratio and the driving voltage of the light-emitting device has not been determined. achieve the effect of low driving voltage and high light emission intensity

Inactive Publication Date: 2010-01-14
SHOWA DENKO KK
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Benefits of technology

The present inventors have developed an improved method for producing GaN based LEDs with better efficiency at lower voltages compared to traditional methods such as MOCVD or MBE techniques. By adjusting certain factors like N type dopants (n-dopers) supplied rate into specific ranges, these devices can produce more brightly visible lights while reducing their power consumption.

Problems solved by technology

This patented describes different ways to improve the performance of galliium nitride based compounds semi conductive laser diodes used in electronic displays like LCDs. By adjusting certain parameters during manufacturing these LED components, they may achieve better efficiency and brightness levels compared to traditional methods involving adding impurities into their active regions. Additionally, reducing injection pressure helps reduce energy consumption without affecting luminous intensity. Overall, there have been technical problem addressed through various techniques described above including optimizing the design of the component parts involved in producing efficient Gallium Nitide containing quantum dots emitters suitable for use in display technologies.

Method used

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  • Process for production of gallium nitride-based compound semiconductor light emitting device
  • Process for production of gallium nitride-based compound semiconductor light emitting device
  • Process for production of gallium nitride-based compound semiconductor light emitting device

Examples

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example 1

[0074]A sapphire substrate was set on a susceptor, and TMAl and NH3 were supplied together with H2 carrier gas onto the substrate while controlling the pressure to 20 kPa (200 mbar) and the temperature to 1100° C., to form an AlN buffer layer. The growth time was 10 minutes.

[0075]Next, TMGa and NH3 were supplied with a pressure of 40 kPa (400 mbar) and a temperature of 1030° C. for 3-hour growth of an undoped GaN underlying layer on the AlN buffer layer. SiH4 was then supplied as an n-type dopant while maintaining the same pressure and temperature, for 1-hour growth of an n-type GaN layer. This procedure formed an n-type contact layer.

[0076]Next, the carrier gas was switched from H2 to N2 with a pressure of 40 kPa (400 mbar) and a temperature of 750° C., and TEGa and TMIn were supplied for 90-minute growth of an n-type GaxIn1-xN layer. SiH4 was simultaneously supplied as the dopant. The TMIn supply rate was adjusted for an In composition of 1−X=0.02. This procedure formed an n-type cla

example 2

[0083]A sapphire substrate was set on a susceptor, and TMAl and NH3 were supplied together with H2 carrier gas onto the substrate while controlling the pressure to 20 kPa (200 mbar) and the temperature to 1100° C., to form an AlN buffer layer. The growth time was 10 minutes.

[0084]Next, TMGa and NH3 were supplied with a pressure of 40 kPa (400 mbar) and a temperature of 1030° C. for 3-hour growth of an undoped GaN underlying layer on the AlN buffer layer. SiH4 was then supplied as an n-type dopant while maintaining the same pressure and temperature, for 1-hour growth of an n-type GaN layer. This procedure formed an n-type contact layer.

[0085]Next, the carrier gas was switched from H2 to N2 with a pressure of 40 kPa (400 mbar) and a temperature of 750° C., and TEGa and TMIn were supplied for 90-minute growth of an n-type GaxIn1-xN layer. SiH4 was simultaneously supplied as the dopant. The TMIn supply rate was adjusted for an In composition of 1−X=0.02. This procedure formed an n-type cla

example 3

[0092]A sapphire substrate was set on a susceptor, and TMAl and NH3 were supplied together with H2 carrier gas onto the substrate while controlling the pressure to 20 kPa (200 mbar) and the temperature to 1100° C., to form an AlN buffer layer. The growth time was 10 minutes.

[0093]Next, TMGa and NH3 were supplied with a pressure of 40 kPa (400 mbar) and a temperature of 1030° C. for 3-hour growth of an undoped GaN underlying layer on the AlN buffer layer. SiH4 was then supplied as an n-type dopant while maintaining the same pressure and temperature, for 1-hour growth of an n-type GaN layer. This procedure formed an n-type contact layer.

[0094]Next, the carrier gas was switched from H2 to N2 with a pressure of 40 kPa (400 mbar) and a temperature of 750° C., and TEGa and TMIn were supplied for 90-minute growth of an n-type GaxIn1-xN layer. SiH4 was simultaneously supplied as the dopant. The TMIn supply rate was adjusted for an In composition of 1−X=0.02. This procedure formed an n-type cla

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Abstract

In the process for production of a gallium nitride-based compound semiconductor light emitting device, when an n-type semiconductor layer, a light emitting layer obtained by alternately stacking an n-type dopant-containing barrier layer and a well layer, and a p-type semiconductor layer, composed of gallium nitride-based compound semiconductors, are grown in that order on a substrate, the ratio of the supply rates of n-type dopant and Group III element during growth of the barrier layer (M/III) is controlled to a range of 4.5×10−7≦(M/III)<2.0×10−6 in terms of the number of atoms.

Description

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Claims

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Application Information

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Owner SHOWA DENKO KK
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