Target material and thin membrane manufactured with the target material

一种靶材、薄膜的技术，应用在靶材领域，能够解决缩孔、工艺复杂、铸件成分不易控制等问题，达到降低复杂度的效果

Inactive Publication Date: 2008-08-20
SOLAR APPLIED MATERIALS TECHNOLOGY CORPORATION
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Although casting can obtain a target with high density and low oxygen content, when the copper-gallium binary alloy is used to make the absorber layer of a solar cell, it needs to use more complicated co-sputtering (Co-sputtering) or multi-pass sputtering ( multi-sputtering) procedures, and even selenization (selenization) method, so as to produce CIGS series alloy thin films, so the process is also quite complicated; in addition, when melting (melting) Cu-Ga binary alloys, due to The vapor pressure of Ga is very high, making it difficult to control the composition of castings (ingot); moreover, casting will cause problems such as shrinkage and composition segregation (segregation)

Method used

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Embodiment Construction

[0034] The first kind of target material of the present invention, its element composition is IB x -IIIA y -VIA z ;in,

[0035] IB is selected from at least one of the following groups: Cu (copper) and Ag (silver);

[0036] IIIA is selected from at least one of the following groups: In (indium) and Ga (gallium);

[0037] VIA is selected from at least one of the following groups: S (sulfur), Se (selenium) and Te (tellurium);

[0038] x is the atomic percentage of IB content, y is the atomic percentage of IIIA content, z is the atomic percentage of VIA content, and satisfies 0≤x<1, 0

[0039] The second target material of the present invention, its elemental composition is IB x -IIIA y -VIA z ;in,

[0040] IB is selected from at least one of the following groups: Cu and Ag;

[0041] IIIA is selected from at least one of the following groups: In and Ga;

[0042] VIA is selected from at least one of the following groups: S, Se and Te;

[0043]...

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PUM

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Abstract

The invention mainly provides a target, the elemental composition of which is IBx-IIIAy-VIAz, wherein, IB is selected from at least one of the group as follows: Cu and Ag; IIIA is selected form at least one of the group as follows: In and Ga; VIA is selected from as least one of the group as follows: S, Se and Te; x, y and z are respectively atomic percents of contents of IB, IIIA and VIA while the x is more than or equal to 0 and less than 1, so is the y, the z is more than 0 and less than 1 and the sum of the x, the y and the z is equal to 1; the production method of the target comprises: pre-alloy is formed: the pre-alloy is synthesized by one element of the target and more than one other element in the elemental composition of the target; powder production: the pre-alloy is produced to be powder; powder mix: the powder is directly mixed or mixed with powder of other elements or pre-alloy powder; sintering: the powder mixture forms the target after sintering. The invention also provides a thin-film used in solar battery, which is made by sputtering the target.

Description

technical field [0001] The present invention mainly relates to a target material, especially a target material with IB-IIIA-VIA element composition, which can be applied to sputtering to manufacture thin films of solar cells. Background technique [0002] In the era of gradual lack of fossil fuels, coupled with the increasingly serious problems of global climate change and air pollution, the application of alternative energy sources has attracted more and more attention. Among them, solar cells (solar cells) can provide low-cost and endless power. potential has been highlighted. Among the current products, solar cells can be roughly divided into: [0003] (1) Wafer type solar cells: including single crystal silicon and polycrystalline silicon; and [0004] (2) Thin film type solar cells. [0005] Although silicon chip-type solar cells are the mainstream in the current market, because of the indirect energy gap (indirect energy gap), thicker silicon materials are required ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23C14/34C23C14/14H01L31/0216
Inventor 李仲仁赵勤孝毛庆中
Owner SOLAR APPLIED MATERIALS TECHNOLOGY CORPORATION
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