3 results about "Tellurium" patented technology

The invention discloses an analyzing method for quickly and precisely measuring tellurium in a tellurium smelting process. The measuring range of the tellurium in material is 20-95% of mass percent. The analyzing method for quickly and precisely measuring the tellurium in the tellurium smelting process mainly includes steps that weighing a certain amount of sample, adding a proper amount of hydrochloric acid, nitric acid and sulfuric acid dissolving sample, adding bromine water to shield As and Sb interference, and using ammonium ferrous sulfate to titrate the tellurium content under a proper amount of potassium dichromate and thiophosphate. The analyzing method for quickly and precisely measuring the tellurium in the tellurium smelting process uses standard addition test and parallel test to verify the accuracy and precision of the method; the analyzing method for quickly and precisely measuring the tellurium in the tellurium smelting process is high in precision and capable of meeting the actual needs of the analysis and detection for the tellurium content in the material in the tellurium production process.

The invention discloses a mercury cadmium telluride avalanche diode detector capable of modulating a surface energy band. By adding an electrode above a passivation layer of a pn junction depletion region, the pn junction energy band at the interface between the passivation layer and the mercury cadmium telluride can be modulated, and the pn junction at the interface between the passivation layerand the mercury cadmium telluride tends to be flat, thereby suppressing surface generation-recombination, surface tunneling, and surface leakage currents. The detector has the advantages that the surface energy band of the pn junction region can be modulated to be flat, and the surface leakage current is suppressed to enable the diode to work in the Geiger mode under the reverse large bias voltage, which is advantageous for solving the problem that the mercury cadmium telluride avalanche diode device of the conventional structure may have large leakage current at the surface when the reverse bias voltage is greater than the avalanche breakdown voltage, causes the photodiode to undergo thermal-electric breakdown, and limits signal detection in a linear mode.

The invention relates to the non-plane chip and telluride solar cell in photoelectric technology field. Wherein, it treats the cell substrate into the required non-plane structure, and applies film material contained at least one telluride to prepare the final product. This cell can absorbe and transfer sunlight from different directions furtherest. This invention is low cost fit to spread.