3 results about "Gallium" patented technology

The invention discloses a composite phase change material for an LED thermal interface and a preparation method thereof. The composite phase change material consists of the following raw materials by mass percent: 18-45% of bismuth, 10-27% of tin, 35-55% of indium, 0-1% of antimony, 0-2% of gallium and the balance of colloidal graphite powder. Or, the composite phase change material consists of the following raw materials by mass percent: 44.51% of bismuth, 17.47% of tin, 35.77% of indium, 0.55% of antimony and the balance of colloidal graphite powder. Or, the composite phase change material consists of the following raw materials by mass percent: 34.75% of bismuth, 13.47% of tin, 49.53% of indium, 0.55% of antimony and the balance of colloidal graphite powder. Or, the composite phase change material consists of the following raw materials by mass percent: 18.97% of bismuth, 26.32% of tin, 51.48% of indium, 1.55% of gallium and the balance of colloidal graphite powder. The preparation method of the composite material comprises: 1) preparing materials; and 2) preparing samples: smelting uniformly mixed materials under protective atmosphere, and cooling to room temperature. The composite phase change material for the LED thermal interface is high in heat conductivity coefficient, wide in phase change temperature threshold, large in enthalpy of phase change and stable in performance, and can effectively lower thermal contact resistance.

The invention discloses a preparation method of a light emitting diode epitaxial wafer, and belongs to the technical field of a semiconductor. The preparation method comprises the steps of providing an AlN sapphire substrate; enabling a non-doped gallium nitride layer to be grown on the AlN sapphire substrate; enabling an N type gallium nitride layer to be grown on the non-doped gallium nitride layer; enabling a multi-quantum-well layer to be grown on the N type gallium nitride layer; enabling an electron barrier layer to be grown on the multi-quantum-well layer; and enabling a P type galliumnitride layer to be grown on the electron barrier layer, wherein the electron barrier layer is a P type doped aluminum gallium nitrogen layer; and the surface, for growing the P type gallium nitride layer, of the electron barrier layer is a nitrogen polarized surface. By setting the surface, with the P type gallium nitride layer, of the electron barrier layer into the nitrogen polarized surface, the contact between the electron barrier layer and the P type gallium nitride layer is closer due to the fact that the nitrogen polarized surface is more uneven in a concave and convex manner than themetal polarized surface, so that the ohmic contact resistance is low, the short channel effect is weak, hole injection can be promoted, the recombination efficiency of holes and electrons can be improved, and the luminous efficiency of the light emitting diode is improved.

The invention discloses an energy-saving and environment-friendly heat-insulating aluminum profile. The aluminum profile comprises an aluminum profile main body and an environment-friendly coating processed on the surface of the aluminum profile main body, wherein the aluminum profile main body is prepared by comprising the following component raw materials of, in parts by weight, 820-900 parts ofaluminum, 8-18 parts of silicon, 5-15 parts of copper, 25-45 parts of manganese, 14-30 parts of magnesium, 3-8 parts of zinc, 1.2-4 parts of titanium, 0.8-1.6 parts of gallium, 0.6-2.4 parts of vanadium, 0.5-3 parts of chromium, 1 -4 parts of nickel, 16-40 parts of iron and 1-5 parts of lithium. The environment-friendly coating is sprayed on the surface of the aluminum profile, so that the heat-insulating performance required during use of the aluminum profile is effectively improved, and the problem that a large amount of water needs to be used in the process of processing the aluminum profile through anodic oxidation and electrophoretic coating, a large amount of waste water is generated after processing, and the energy-saving and environment-friendly performance is poor is avoided at the same time.