Phosphorus-doped amorphous diamond film electrode and preparation method of the same

[0006] Specific implementation mode 1: In this embodiment, the phosphorus-doped amorphous diamond film electrode is made of a substrate, a phosphorus-doped amorphous diamond film and a wire, wherein the phosphorus-doped amorphous diamond film is composed of 58.91-94.74% carbon, 5.10-38.45 % of phosphorus and 0.16 to 2.64% of hydrogen.

[0007] In this embodiment, the surface of the film is connected to the wire through conductive glue. Although the doping of metal or non-metal elements in the amorphous diamond film can effectively improve the electrical conductivity of the amorphous diamond film, reduce the internal stress of the film, thereby enhancing the bonding strength with the substrate, but doping the metal in the amorphous diamond film Platinum (Pt), the resistivity of the obtained electrode material does not increase significantly, but only improves the electrochemical catalytic performance; doping nitrogen (N) in the amorphous diamond film is due to the effect of N in t

[0008] Embodiment 2: The difference between this embodiment and Embodiment 1 is that the phosphorus-doped amorphous diamond film electrode is made of a substrate, a phosphorus-doped amorphous diamond film, wires and epoxy resin, wherein the epoxy resin is coated on the substrate around and back. Others are the same as the first embodiment.

[0009] Embodiment 3: The difference between this embodiment and Embodiment 1 or 2 is that the phosphorus-doped amorphous diamond film electrode is made of a substrate, a phosphorus-doped amorphous diamond film, a wire, epoxy resin and a metal layer, and is located on the phosphorus-doped The area of ​​the metal layer on the surface of the amorphous diamond film is 1×1mm 2 , The thickness is 50-200nm, and the wire is bonded on the metal layer. Others are the same as the first embodiment.