MOSFET using gate work function engineering for switching applications
a technology of gate work and function engineering, applied in the field of circuit configuration and packaging configuration of power mosfets, can solve the problems of excessive dissipation efficiency loss, excessive gate charge loss, etc., and achieve the effect of reducing capacitance cgd, increasing threshold, and high gate work function
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[0031] Referring to FIG. 7A for a side cross sectional view of a new n-channel MOSFET cell 100 of this invention. The MOSFET 100 is formed on an N+ substrate 105 functioning as a drain. The N+ substrate supporting an N− epi-layer 110 thereon to form a vertical pn-junction region with an N+ source region 115 formed on top of a deeper p-body region 120. The MOSFET 100 further includes a gate 125 formed with polysilicon layer deposited in a trench formed in the epi-layer 110 with a gate oxide layer 130 insulating the gate 125 inside the trench. A current path is established from the source 115 via a channel formed in the p-body 120 along the gate 125 and extends to the drain in the N+ substrate 105. In this new MOSFET cell 100, the work function of the gate is changed to create a shift in the C-V characteristic. To achieve the change of the work function of the gate 125, the gate 125 is doped with a p-type dopant to form a p-type gate.
[0032] With a p-type gate as shown in FIG. 7A, the...
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