This invention discloses a new
MOSFET device. The
MOSFET device has an improved operation characteristic achieved by manufacturing a
MOSFET with a higher gate
work function by implementing a P-doped gate in an N-MOSFET device. The P-type gate increases the
threshold voltage and shifts the C-Vds characteristics. The reduced Cgd thus achieves the purpose of suppressing the
shoot through and resolve the difficulties discussed above. Unlike the conventional techniques, the reduction of the
capacitance Cgd is achieved without requiring complicated fabrication processes and control of the recess
electrode.