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2 results about "Shoot through" patented technology

MOSFET using gate work function engineering for switching applications

InactiveUS20060273379A1Highly functionalLower capacitance CgdSemiconductor devicesCapacitanceWork function engineering
This invention discloses a new MOSFET device. The MOSFET device has an improved operation characteristic achieved by manufacturing a MOSFET with a higher gate work function by implementing a P-doped gate in an N-MOSFET device. The P-type gate increases the threshold voltage and shifts the C-Vds characteristics. The reduced Cgd thus achieves the purpose of suppressing the shoot through and resolve the difficulties discussed above. Unlike the conventional techniques, the reduction of the capacitance Cgd is achieved without requiring complicated fabrication processes and control of the recess electrode.
Owner:ALPHA & OMEGA SEMICON LTD
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