Non-volatile, resistive memory cell based on metal oxide nanoparticles, process for manufacturing the same and memory cell arrangement of the same
a resistive memory cell and metal oxide nanoparticle technology, applied in the direction of material nanotechnology, semiconductor devices, electrical apparatuses, etc., can solve the problems of inability to realize high storage density, unattainable active memory cells of few nanometers in dimension, switching cycles, etc., to achieve lower switching power, lower cost, and storage density. high
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[0039]FIG. 1 illustrates a memory element S. Two nanoparticles 10 of, for example, NiO1-x are embedded in an isolating matrix 11 of a dielectric. The nanoparticles 10 contact a bottom contact 9 via contact locations K1 and a top contact 12 via contact locations K2.
[0040]FIGS. 2a and 2b illustrate a nanoparticle structure with a particle size of 2.9 nm and 7.9 nm, respectively, manufactured in accordance with the embodiment.
[0041]FIG. 3 shows a NiO1-x nanoparticle 10 in an isolating matrix 11 without (left) and with (right) conductive filament. The nanoparticle is contacted by the bottom electrode 9 and the top electrode 12.
[0042]FIGS. 4 and 5 illustrate the configuration of a memory element array. FIG. 4 shows a top view of a memory element array. Word lines 9-1, 9-2 and 9-3 as well as bit lines 12-1, 12-2 and 12-3 are arranged on a substrate 1 made of e.g. silicon. An isolating matrix 11 in which nanoparticles are embedded is arranged between the word lines and the bit lines. Th...
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