7 results about "Volatile memory" patented technology

According to one embodiment, a nonvolatile memory device includes: a memory cell array including memory cells each having a variable resistance element for nonvolatilely storing data identified by an electrically rewritable resistance value; a first data latch storing write and erase data to be written on a given group of memory cells of the memory cell array for a write and erase operation; and a second data latch storing reference data for performing a compensation operation of the given group to compensate write and erase disturbance accompanied by the write or erase operation.

Persistent Memory, byte-addressable non-volatile memory technologies, offer performance advantages and access similar to Dynamic Random Access Memory while having the persistence of disk. Hardware Transactional Memory support, originally designed for DRAM concurrency control, can corrupt persistent memory transactions due to cache evictions before system failure. Unifying storage and memory on the main-memory bus and accessed directly while using HTM for concurrency control has previously required the additional burden of changes to processors to prevent possible data corruption.

The present invention provides a solution for the durability of transactions to persistent memory while using HTM as a concurrency control mechanism, without any changes to processors or cache-coherency mechanisms. The invention includes a software only method and system that provides durability and ordering of HTM transactions to persistent memory. The invention also discloses a back-end memory controller that supports HTM transactions for durability to persistent memory without up-front processor changes.

A method includes determining groups of rows to erase together in order to minimize the margin loss associated with bake after a large number of program and erasure cycles. The method alternatively includes determining groups of rows to erase together to minimize the width of a resultant erase threshold voltage distribution, erasing the groups together, stopping erasure of a group when the group is erase verified and performing the step of erasing on those groups which were not previously erase verified.

Methods of manufacturing non-volatile memory devices are provided including sequentially forming a tunnel insulating layer, a charge-trapping layer, a blocking layer and a conductive layer on a substrate having a channel region. The conductive layer is patterned to form a word line structure, and the blocking layer and the charge-trapping layer are etched using an aqueous acid solution as an etching solution to form a blocking layer pattern and a charge-trapping layer pattern.

The invention relates to an extended adjustment of a control variable for a DC-to-DC converter having a plurality of DC-to-DC converter modules (30-1, 30-2). For this purpose, in addition to the conventional regulation of the individual DC voltage converter module, a further correction variable (K-1, K-2) is determined, which can be added to the regulation variable (R4-1, R4-2). The correction quantity can take into account in particular individual characteristics of the DC voltage converter module, such as component tolerances or the like. For this purpose, correction values suitable for the individual DC voltage converter modules can be determined beforehand and stored in a non-volatile memory. By using these previously stored relationships, the control variables for the individual DC voltage converter modules can be individually adjusted.

The hybrid memory device may include volatile and non-volatile memory cells on a single substrate, or die. The non-volatile memory cells may have ferroelectric capacitors and the volatile memory cells may have paraelectric or linear dielectric capacitors for their respective logic storage components. In some examples, the volatile memory cells may be used as a cache for the non-volatile memory cells. Or the non-volatile memory cells may be used as a back-up for the volatile memory cells. By placing both types of cells on a single die, rather than separate dies, various performance metrics may be improved, including those related to power consumption and operation speed.