A method for detect that bottom topography of phase defects in an EUV photolithography mask multilayer film
A technology of extreme ultraviolet lithography and multilayer film, which is applied in the direction of microlithography exposure equipment, optics, and optomechanical equipment, and can solve problems such as multilayer film deformation, spatial image sensor movement error, and impact on detection accuracy Effects of moving, eliminating detection errors, and improving detection accuracy
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[0032] The present invention will be further described in conjunction with the following examples, but this example should not limit the protection scope of the present invention.
[0033] Specific steps are as follows:
[0034] Step 1. Set the defect bottom morphology parameters of the blank mask containing multi-layer film phase-type defects in the training set:
[0035] Gaussian defect parameters are used to characterize the morphology of phase defects in the masked multilayer film, and the full width at half maximum of the defect surface is ω top , The height is h top , The full width at half maximum of the bottom of the defect is ω bot , The height is h bot , The structure of the multi-layer film containing phase defects in the extreme ultraviolet lithography mask such as figure 1 Shown. Since the surface morphology of the phase-type defect of the masked multilayer film can be better detected by existing instruments, the surface morphology can be set to a known parameter. In thi
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