Ultraviolet light emitting diode epitaxial wafer and manufacturing method thereof

[0028] In order to make the objects, technical solutions and advantages of the present disclosure, the present disclosure will be further described in detail below with reference to the accompanying drawings.

[0029] figure 1 It is a schematic structural diagram of an ultraviolet light emitting diode extension provided by the embodiment of the present disclosure, such as figure 1 As shown, the ultraviolet light emitting diode epitaxial piece includes a substrate 1, and a buffer layer 2, a buffer layer 2, an unpowed AlGaN layer 3, an N-type layer 4, an active layer 5, and a p-type layer 6 in sequentially laminated on the substrate 1.

[0030] The ultraviolet light emitting diode also includes an electronic restriction layer 7 disposed between the active layer 5 and the P-type layer 6, the electronic restriction layer 7 is an AlGaN / MGN / INAlGan / MGN / AlN structure.

[0031] That is, the electronic restriction layer 7 includes an AlGaN layer, an MGN layer, an INALGAN laye