Semiconductor wafer and method for manufacturing same
A manufacturing method and semiconductor technology, applied in semiconductor/solid-state device manufacturing, semiconductor devices, manufacturing tools, etc., to achieve the effect of improving productivity and yield
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[0105] (Example 1)
[0106] The single crystal rod was sliced into a silicon wafer with a diameter of 300 mm, and the silicon wafer was chamfered (chamfered) and flattened. Then, the double-sided grinding machine described in JP 2003-285262 A was used and adjusted to the following conditions to perform double-sided grinding: between the center of the semiconductor wafer and the start position of the outer peripheral sag, the thickness direction of the semiconductor wafer The amount of displacement becomes 100 nm or less, and the center of the semiconductor wafer becomes a convex shape. At this time, since it is not preferable that the outer periphery collapses due to double-sided polishing, a rigid foamed urethane pad is used for the polishing cloth, specifically, Nitta Haas MH-S15A is used. The polishing slurry is adjusted to a pH of 10.5 with abrasive grains composed of colloidal silica with a particle size of 0.05 μm, and the load is 200 g / cm. 2 Come for grinding. In order
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[0107] (Example 2)
[0108] The surface temperature of the polishing cloth during polishing will accumulate heat during polishing, so the temperature of the center part of the polishing cloth will be relatively higher than the outer peripheral part. This temperature difference will affect the polishing rate, so by controlling the range of this area, the starting position of the sag can be controlled. In Example 2, in addition to adjusting the polishing load, the number of revolutions of the polishing head, and the slurry supply temperature in a manner that does not change the average in-plane grinding amount of the wafer, the high temperature area is increased to be greater than that of Example 1, and to make The starting position of the outer peripheral sag is closer to the center side (35mm from the outer peripheral end to the center side) than the outer peripheral part of the semiconductor wafer that is the measurement object of ESFQR. The one side of the silicon wafer is chemica
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