Forming method of semiconductor structure, and semiconductor structure

The invention provides a forming method of a semiconductor structure, and a semiconductor structure. The forming method of the semiconductor structure comprises: forming a groove in a substrate, the groove dividing the substrate into a first active area and a second active area; forming a first well region in the first active area, forming a second well region in the second active area, and forming a depletion region at the connection position of the first well region and the second well region; performing first ion implantation in the first well region at the bottom of the groove, and performing second ion implantation in the second well region at the bottom of the groove, the type of the first ion implantation being the same as the type of the first well region, the type of the second ion implantation being the same as the type of the second well region; and after the ion implantation, filling a dielectric layer in the groove to form an isolation structure. According to the invention, the method reduces the dimension of the isolation structure and accordingly reduces the occupation area of the isolation structure on a chip; a electrostatic protection circuit can also be quite easily triggered so as to protect a semiconductor device from being damaged; and the latch effect generation probability can also be reduced.