A prebaking method of a surface acoustic wave device in a photoetching process

A surface acoustic wave device and lithography technology, which is applied in the processing of photosensitive materials and other directions, can solve the problems of complex process, serious lateral corrosion and high cost, and achieve the realization of thick film and thin lines, reduce process costs, and slow lateral corrosion. effect of speed

Inactive Publication Date: 2015-01-28
BEIJING ZHONGXUN SIFANG SCI & TECH
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  • Abstract
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Problems solved by technology

[0003] The invention provides a pre-baking method of a surface acoustic wave device in the photolithography process to solve the problem of severe lateral corrosion in the existing wet process when it is

Method used

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Example Embodiment

[0009] The technical solutions in the embodiments of the present invention will be described clearly and completely below. Obviously, the described embodiments are only a part of the embodiments of the present invention, rather than all the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by those of ordinary skill in the art without creative work shall fall within the protection scope of the present invention.

[0010] This specific embodiment provides a pre-baking method for a surface acoustic wave device in a photolithography process, including:

[0011] The temperature of the oven is stabilized at 160 degrees Celsius, and the wafer is placed in the oven for baking;

[0012] After baking for 10 minutes, reduce the temperature of the oven to 155 degrees Celsius, and after baking for another 10 minutes, reduce the temperature of the oven to 150 degrees Celsius, and keep it at a constant temperature for 1 hour;

[0013] The temperature of the

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Abstract

The invention provides a prebaking method of a surface acoustic wave device in a photoetching process, and belongs to the technical field of surface acoustic wave devices. The method includes: stabilizing a temperature of a drying oven at 160 DEG C, putting a wafer into the drying oven, roasting the wafer, lowering the temperature of the drying oven to 155 DEG C after the wafer is roasted for 10 min; lowering the temperature of the drying oven to 150 DEG C after the chip is roasted for another 10 min, maintaining the temperature for 1 h, lowering the temperature of the drying oven to 120 DEG C, maintaining the temperature for 10 min, and taking the wafer out. The roasting temperature of the wafer is controlled at 150-160 DEG C to allow a photoresist to reach a rheological state so as to achieve the objectives of protecting lines furthest, delaying the speed of side-direction corrosion and achieving thick membranes and thin lines, thus reducing the degree of process complexity of dry etching or stripping and reducing the process cost.

Description

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Claims

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Application Information

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Owner BEIJING ZHONGXUN SIFANG SCI & TECH
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