Solid state disk read system and method

一种固态硬盘、统计分析的技术,应用在静态存储器、只读存储器、信息存储等方向,能够解决读性能下降、读错误、流程冗余等问题,达到提升读性能的效果

Active Publication Date: 2018-10-12
SHENZHEN YILIAN INFORMATION SYST CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0002] As the use time of solid-state drives becomes longer, the particle characteristics of Nand Flash will cause the internal voltage distribution to shift during storage. Different read voltage offsets must be tried to read the data correctly, that is, Read Retry; however, the general ReadRetry process Different Levels will be read sequentially until normal reading or reading error
[0003] However, as the usage time of SSD continues to prolong, especially at the later stage of life, the storage voltage distribution of Nand Flash is shifting constantly, and the Level order stored in the Level table cannot always meet the conditions for valid arrangement. At this time, the process will increase. Redundancy, resulting in a decline in read performance

Method used

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Examples

Experimental program
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Embodiment Construction

[0040] In order to fully understand the technical content of the present invention, the technical solutions of the present invention will be further introduced and illustrated below in conjunction with specific examples, but not limited thereto.

[0041] like Figure 1 to Figure 3 Specific examples shown, such as figure 1 As shown in the flow chart of the existing SSD read method, the ReadRetry process will first obtain the effective Level value of the current position to be read from the Level table. If the read is successful, it will end. Level value, and so on until the last Level value; Generally, a Level sequence is initially stored in the Level table and arranged according to effectiveness; Generally, the service life of SSD can be measured by the number of PE (program / erase), and the PE number is larger That is to say, in the late stage of the solid-state hard disk, the voltage distribution offset of the Nand Flash is unstable, and the effective Level value at which th...

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PUM

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Abstract

The invention relates to a solid state disk read system and method. The solid state disk read system comprises an obtaining module, a read judgment module, a recording module, a PE level judgment module and a statistic analysis module. The obtaining module is used for obtaining a first Retry Level value from a level stable in sequence. The read judgment module is used for judging whether the RetryLevel value is a maximum satisfaction end condition or not. The recording module is used for recording an effective value of Retry Level. The PE level judgment module is used for judging whether a current PE level is changed or not. The statistic analysis module is used for carrying out statistic analysis on all recorded effective Retry Level information, rearranging the information and refreshing a new sequence to the level table. According to the system and the method, continuous statistic analysis is carried out on online real-time read results of a solid state disk, and effective levels are obtained, recorded and stored; the level table is refreshed, so the level table is arranged according to effectiveness; the effective level values can be obtained rapidly through Read Retry; and the read performance of the solid state disk later in life is improved.

Description

technical field [0001] The present invention relates to the field of solid-state hard disk reading, and more specifically refers to a solid-state hard disk reading system and a method thereof. Background technique [0002] As the use time of solid-state drives becomes longer, the particle characteristics of Nand Flash will cause the internal voltage distribution to shift during storage. Different read voltage offsets must be tried to read the data correctly, that is, Read Retry; however, the general ReadRetry process Different Levels will be read sequentially until normal reading or reading error. [0003] However, as the usage time of SSD continues to prolong, especially at the later stage of life, the storage voltage distribution of Nand Flash is shifting constantly, and the Level order stored in the Level table cannot always meet the conditions for valid arrangement. At this time, the process will increase. Redundancy leads to a decrease in read performance. Contents o...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G11C16/34
CPCG11C16/3495
Inventor 胡中中冯元元李传业
Owner SHENZHEN YILIAN INFORMATION SYST CO LTD
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