Semiconductor apparatus including power gating circuits

a technology of power gating circuit and semiconductor apparatus, which is applied in the direction of generating/distributing signals, pulse techniques, instruments, etc., can solve the problems of power gating efficiency degrading

Active Publication Date: 2019-04-18
SK HYNIX INC
View PDF5 Cites 3 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Benefits of technology

The patent describes a semiconductor device with two logic circuits that can be selectively coupled to power supply nodes based on their characteristics. This allows for more efficient power distribution and better performance of the device. The device also includes a control logic circuit that monitors the characteristics of the logic circuits to optimize the power supply. Overall, the patent presents a more efficient and effective semiconductor device.

Problems solved by technology

However, each of the transistors may have a process skew and / or variation depending on a manufacturing environment, and may have a temperature variation depending on an operating situation.
Therefore, in the case where the transistors are uniformly designed and controlled, power gating efficiencies may degrade.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0012]Hereinafter, a semiconductor apparatus including a power gating circuit will be described below with reference to the accompanying drawings through various examples of embodiments.

[0013]Various embodiments may be directed to a semiconductor apparatus capable of monitoring the characteristics of logic circuits, switching power gating circuits coupled with different logic circuits and changing the driving force of a power supply voltage to be supplied to logic circuits.

[0014]FIG. 1 is a diagram illustrating a representation of an example of the configuration of a semiconductor apparatus 1 in accordance with an embodiment. The semiconductor apparatus 1 may include at least two logic circuits and at least two power gating circuits. Referring FIG. 1, the semiconductor apparatus 1 will be described by way of an example including three logic circuits. The semiconductor apparatus 1 may include a first logic circuit 111, a second logic circuit 112 and a third logic circuit 113. The fir...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

A semiconductor apparatus may include logic circuits and a control logic. The control logic may be configured to monitor characteristics of the logic circuits to allow the semiconductor apparatus to perform at different operating speeds.

Description

CROSS-REFERENCES TO RELATED APPLICATION[0001]The present application claims priority under 35 U.S.C. § 119(a) to Korean application number 10-2017-0132778, filed on Oct. 12, 2017, in the Korean Intellectual Property Office, which is incorporated herein by reference in its entirety.BACKGROUND1. Technical Field[0002]Various embodiments generally relate to a semiconductor technology, and, more particularly, to power gating circuits and a semiconductor apparatus including the same.2. Related Art[0003]Electronic apparatuses may include a large number of electronic components. Among the electronic apparatuses, a computer system may include many electronic components which are manufactured by semiconductors. Semiconductor apparatuses which configure the computer system may operate by being applied with a power supply voltage. The power supply voltage may be applied from an external power source such as a power management integrated circuit. The semiconductor apparatuses may operate in vari...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Applications(United States)
IPC IPC(8): H03K19/00H03K17/14H03K19/0175H03K19/003H03K5/135H03K5/134G06F9/4401G06F1/26G06F1/28G06F1/32
CPCH03K19/0016H03K17/145H03K19/017545H03K19/00369H03K5/135H03K5/134G06F9/4401G06F1/263G06F1/28G06F1/3287H03K2005/00019H03K2005/00195H03K19/00384H03K19/0813G06F1/206G06F1/3296G06F1/324G06F1/10H03K19/0013H03K3/012H03K3/037
Inventor KIM, WOONGRAE
Owner SK HYNIX INC
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products