1 results about "Aluminum gallium nitride" patented technology

The invention discloses a deep ultraviolet epitaxial wafer and a preparation method thereof. The deep ultraviolet epitaxial wafer comprises P-type gallium nitride, and the P-type gallium nitride comprises a P-type aluminum gallium nitride layer, an aluminum nitride layer, a P-doped gallium nitride layer and a heavily-doped P-type aluminum gallium nitride layer which grow in sequence, wherein the P-type aluminum gallium nitride layer can effectively reduce absorption of deep ultraviolet light, the aluminum nitride layer can effectively reduce quantum well energy band bending and improve quantum well hole injection on the basis of effectively reducing the absorption of the deep ultraviolet light, the P-doped gallium nitride layer can realize high doping and improve quantum well hole injection, and the heavily-doped P-type aluminum gallium nitride layer can effectively realize ohmic contact of a chip process, and can effectively reduce the absorption of the deep ultraviolet light at the same time. Therefore, by combining the four structural layers included in the P-type gallium nitride, the absorption of the deep ultraviolet light can be reduced, and the luminous efficiency of a deep ultraviolet LED is improved.