The present invention relates to a method for treatment of semiconducting nanoparticles wherein in a step A semiconducting nanoparticles comprising long chain insulting primary ligands are dispersed in a volatile dispersion solvent capable of dissolving insulating primary ligands and precipitated using a washing agent. TGA-MS analysis shows that the treatment according to the method of the present invention allows complete removal of the outer layer of synthesis ligands of the surface of prepared nanoparticles and improves removal of synthesis ligands on the surface of prepared nanoparticles. The present invention also relates to semiconducting nanoparticles, ink formulation and electronic devices comprising the semiconducting nanoparticles obtainable by the procedure of the invention.