Multistage surface modification procedure of semiconducting nanoparticles for use in hybrid solar cells and printable electronics

a technology of semiconducting nanoparticles and printable electronics, which is applied in the direction of fatty acid chemical modification, non-metal conductors, conductors, etc., can solve the problems of reducing energy conversion efficiency and lifetime, reducing the efficiency of organic solar cells, and consuming a lot of manpower, so as to achieve the effect of effective use of solar cells and simple and reliable substitution of primary ligands by intermediate ligands

Inactive Publication Date: 2014-02-06
QUANTUM MATERIALS
View PDF2 Cites 2 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Benefits of technology

This patent describes a way to make it easier and more reliable to replace certain layers with others. It also suggests that this process can be done without affecting the properties of the particles themselves.

Problems solved by technology

The technical problem addressed in this patent text relates to finding a reliable and efficient method for replacing existing methods involving complex processes like chemical vapor deposition (CVD) and atomic layer deposition (ALCD)).

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Multistage surface modification procedure of semiconducting nanoparticles for use in hybrid solar cells and printable electronics
  • Multistage surface modification procedure of semiconducting nanoparticles for use in hybrid solar cells and printable electronics
  • Multistage surface modification procedure of semiconducting nanoparticles for use in hybrid solar cells and printable electronics

Examples

Experimental program
Comparison scheme
Effect test

example 1

Thermo Gravimetric Analysis-Mass Spectrometry (TGA-MS) Measurement of CdSe Nanoparticle of Quantum Dot Shape (CdSe-QD) with Primary Ligand Trioctylphosphine (=TOP) and Oleic Acid (=OA)

[0103]Semiconducting nanopartieles CdSe-QD with primary ligand trioctylphosphine (=TOP) and oleic acid (=OA) were prepared according to the method of US2007 / 0132052A1

[0104]The TGA-MS measurements are performed with dried semiconducting nanoparticles under an inert atmosphere to prevent oxidation or other undesired reactions during the analysis. The amount of the dried sample should he at least 50 mg.

[0105]50 mg of dried sample were loaded onto a high-precision balance pan placed in a small electrically heated oven with thermocouple accurately measuring the internal oven temperature.

[0106]An inert gas preferably Ar or He and most preferably He with a flow rate of 80 ml / minute was flown into the overt for preferably at least two tours to purge away traces of oxygen and water out of the oven.

[0107]Then t

example 2

Preparation of CdSe-QD with Primary Ligand TOP and OA Using MeOH According to the Method of US2007 / 0132052A1 and Solar Cell Preparation

[0113]A—Washing of CdSe-QD with primary ligand TOP and OA using MeOH according to the method of US2007 / 0132052A1.

[0114]Above mentioned CdSe-QD with primary ligand TOP and OA were prepared and washed with MeOH according to the method of US2007 / 0132052A1.

[0115]Weight percentage distribution obtained alter TGA-MS Analysis according to the method of example 1 is shown is FIG. 3, column 2.

[0116]FIG. 4A shows a TEM Picture (made with TEM-FEI Tecnai 20 of CdSe nanoparticles after 3×MeOH washing.

[0117]B—Preparation of a solar cell using an ink comprising semiconductor nanoparticles of example 2-A

[0118]100 mg of the CdSe-QD with ligand TOP and OA of example 2-A were dispersed in 1 mL of the ink solvent (chlorobenzene) as the first stock solution. The 11 mg of a second semiconducting material (poly(3-hexylthiophene) or P3HT) were dispersed in 1 mL of the in

example 3

Washing of CdSe-QD with Primary Ligand TOP and OA Using MeOH and n-Hexane According to the Method of the Present Invention and Solar Cell Preparation

[0122]100 mg of the above mentioned CdSe-QD with primary ligand TOP and OA were precipitated by methanol according to the method of US2007 / 0132052A1. The semiconducting nanoparticles CdSe-QD were separated from the supernatant by centrifugation and dried with nitrogen gas. The dried semiconducting nanoparticles CdSe were redispersed in 1 ml n-Hexane with a concentration of 100 mg of CdSe nanoparticle per 1 mL of n-Hexane and stirred at room temperature for 12-24 hours. Subsequently 10 ml methanol were added into this dispersion to precipitate semiconducting nanoparticles and to remove further TOP and OA (ratio of dispersion solvent to washing agent 1:10). The precipitate was separated from supernatant by centrifugation. The semiconducting nanoparticles were dried with nitrogen gas and redispersed in 1 ml n-Hexane. Washing was repeated tw

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

The present invention relates to a method for treatment of semiconducting nanoparticles wherein in a step A semiconducting nanoparticles comprising long chain insulting primary ligands are dispersed in a volatile dispersion solvent capable of dissolving insulating primary ligands and precipitated using a washing agent. TGA-MS analysis shows that the treatment according to the method of the present invention allows complete removal of the outer layer of synthesis ligands of the surface of prepared nanoparticles and improves removal of synthesis ligands on the surface of prepared nanoparticles. The present invention also relates to semiconducting nanoparticles, ink formulation and electronic devices comprising the semiconducting nanoparticles obtainable by the procedure of the invention.

Description

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Owner QUANTUM MATERIALS
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products