How to Wide-bandgap semiconductor?

Patents

Literature

Hiro is an intelligent assistant for R&D personnel, combined with Patent DNA, to facilitate innovative research.

Hiro

1 results about "Wide-bandgap semiconductor" patented technology

Filter

Efficacy Topic

Property

Owner

Technical Advancement

Application Domain

Technology Topic

Technology Field Word

Patent Country/Region

Patent Type

Patent Status

Application Year

Inventor

Wide-bandgap semiconductors (also known as WBG semiconductors or WBGSs) are semiconductor materials which have a relatively large band gap compared to conventional semiconductors. Conventional semiconductors like silicon have a bandgap in the range of 1 - 1.5 electronvolt (eV), whereas wide-bandgap materials have bandgaps in the range of 2 - 4 eV. Generally, wide-bandgap semiconductors have electronic properties which fall in between those of conventional semiconductors and insulators.

Technique for perfecting the active regions of wide bandgap semiconductor nitride devices

InactiveUS20050164475A1Lower average currentHigh densityPolycrystalline material growthFrom solid stateEngineeringNitride

This invention pertains to e lectronic / optoelectronic devices with reduced extended defects and to a method for making it. The method includes the steps of depositing a dielectric thin film mask material on a semiconductor substrate surface; patterning the mask material to form openings therein extending to the substrate surface; growing active material in the openings; removing the mask material to form the device with reduced extended defect density; and depositing electrical contacts on the device.

Owner:THE UNITED STATES OF AMERICA AS REPRESENTED BY THE SECRETARY OF THE NAVY

1 results about "Wide-bandgap semiconductor" patented technology

Technique for perfecting the active regions of wide bandgap semiconductor nitride devices

Popular searches