High power capacity FBAR for wireless communication and application thereof

A wireless communication, high-power technology, applied in the electrical field, can solve problems such as FBAR rupture and failure, and achieve the effect of improving power capacity, increasing power capacity, and eliminating stress concentration

Inactive Publication Date: 2010-06-30
ZHEJIANG UNIV
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  • Abstract
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Problems solved by technology

The maximum power capacity of a film bulk acoustic resonator depends on two aspects: the maximum mechanical stress it can withstand, and the degree of heat dissipation generated during the conversion of acoustic energy and electrical energy, but mainly the former, especially At present, there is stress concentration in the FBAR structure during work, which makes some parts reach the mechanical strength of the material ahead of other parts, resulting in failure of FBAR rupture when the applied power density is much higher than the intrinsic mechanical strength of the piezoelectric film.

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  • High power capacity FBAR for wireless communication and application thereof
  • High power capacity FBAR for wireless communication and application thereof
  • High power capacity FBAR for wireless communication and application thereof

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[0045] image 3 with Figure 4 These are the top view and cross-sectional view of the high power capacity FBAR used in the present invention. It mainly consists of the following parts: a substrate 101, an air gap 102 on the upper surface of the substrate 101, a support layer 103 on the substrate 101 and the air gap 102, a piezoelectric film layer 104 on the support layer 103, The input electrode layer 105 and the output electrode layer 106 on the piezoelectric film layer 104, and the ground plane 107 and the ground plane 108 on both sides of the input electrode layer 105 and the output electrode layer 106. Wherein the air gap 102 can be used figure 2 The sinking type formed by removing part of the surface of the silicon wafer as shown in the figure may also be an upward convex type formed directly on the silicon surface of the substrate without removing the silicon surface; the support layer 103 improves the mechanical robustness of the FBAR structure on the one hand. On the othe

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Abstract

The invention discloses a high power capacity FBAR for wireless communication and the application thereof; the high power capacity FBAR comprises a substrate, an air gap which is arranged on the upper surface of the substrate, supporting layers which are arranged on the substrate and the air gap, piezoelectric films which are arranged on the supporting layers, an input electrode and an output electrode which are arranged on the piezoelectric films, and a ground plane which is arranged on the piezoelectric films; at least some areas of the input electrode and the output electrode are arranged right above the air gap; and the high power capacity FBAR works in a shear mode. The high power capacity FBAR of the invention works in the shear wave mode, effectively removes the stress concentration in a longitudinal wave mode, so as to improve the power capacity. Similarly, the power capacity of a FBAR filter based on the structure is correspondingly improved, so that the FBAR filter is applicable to large-power application occasions in wireless communication.

Description

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Claims

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Application Information

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Owner ZHEJIANG UNIV
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