K band SIW transmission line and design method thereof

A transmission line, K-band technology, used in waveguides, waveguide-type devices, circuits, etc., can solve the problem of low accuracy, and achieve the effect of high power capacity and small size

Active Publication Date: 2015-03-04
UNIV OF ELECTRONIC SCI & TECH OF CHINA
View PDF2 Cites 7 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, this formula

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Examples

Experimental program
Comparison scheme
Effect test

Example Embodiment

[0024] As a more specific implementation example, the present invention will be described by taking several main parameters in the design as examples.

[0025] The invention uses three-dimensional electromagnetic simulation software HFSS (High Frequency Structure Simulator) for design.

[0026] Step 1. According to the empirical formula of the circular hole SIW structure, the parameters of the K-band 30mm SIW transmission line are obtained: the diameter of the metal through hole d, the hole spacing s between two adjacent metal through holes in the same row, and the difference between the two rows of metal holes Between width w. The parameters of the dielectric substrate are: the relative permittivity is 3, and the loss tangent is 0.0013. The substrate thickness is 1mm. The initial test d and s choose 0.6mm and 1.2mm. The value of w is 6.49mm.

[0027] Step 2. Use d as the side length of the square hole, and use s and w for the hole spacing and width. Take this as the initial value

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

The invention relates to microwave, transmission line technologies. Provided is a K band SIW transmission line and design method thereof. Two rows of square through holes are punched in a medium substrate, two parallel sides of a square through hole are parallel with the propagation direction, side length of the square hole is 0.4 mm & lt; d <= 0.8 mm; the line spacing of two rows of metal through holes is w & lt; 8 mm, s is the distance between two adjacent metal through holes of the same row is 0.4 & lt; d/s < 0.8, the equivalent formula of the SIW propagation constant and the medium waveguide broadside is weff = w - d. A novel SIW transmission line is achieved by changing the shape of the through hole; the novel SIW transmission line meets the actual needs of transmission performance, is low in volume and high in power capacity, the available bandwidth thereof reaches the full band; and the novel SIW transmission line has a precise equivalent formula with the medium waveguide. A new structure option is provided for designing a variety of microwave devices with planar circuits.

Description

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Owner UNIV OF ELECTRONIC SCI & TECH OF CHINA
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products