Bragg reflection waveguide double-beam laser and application method thereof

A Bragg reflection, double beam technology, applied in semiconductor lasers, lasers, laser parts and other directions, can solve the problems of difficult to stabilize the output power of the device, complex optical alignment, difficult to mass production, etc., to achieve compactness and high stability , large laser cavity, the effect of improving reliability

Active Publication Date: 2012-10-03
CHANGCHUN INST OF OPTICS FINE MECHANICS & PHYSICS CHINESE ACAD OF SCI
View PDF1 Cites 13 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

These methods require complex optical alignment and are not compact in size, high in cost, poor in repeatability, and difficult to mass-produce
Another solution is to use a double-strip semiconductor laser or a phase-coupled strip-shaped semiconductor laser array, which can output two laser beams laterally, but the probl

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Examples

Experimental program
Comparison scheme
Effect test

Example Embodiment

[0040] Example 1:

[0041] Such as Figure 4 (a), (b), and (c) show the refractive index distribution, the near-field and far-field intensity distribution of the fundamental transverse mode of a 980nm wavelength Bragg reflection waveguide dual-beam laser. Its lower waveguide layer and upper waveguide layer both use 6 pairs of Al with a thickness of 100nm / 600nm respectively 0.1 Ga 0.9 As / Al 0.3 Ga 0.7 As periodic waveguide, where Al 0.1 Ga 0.9 As and Al 0.3 Ga 0.7 The refractive index of As material is about 3.45 and 3.34 respectively; the defect layer material is Al 0.3 Ga 0.7 As, thickness is 1300nm, refractive index is 3.34; In active area 0.2 Ga 0.8 As / GaAs quantum wells (QWs) are located in the center of the defect layer. From Figure 4 (b) Near-field intensity distribution of the fundamental mode. It can be seen that the near-field electric field distribution of the fundamental mode of the laser in the present invention is close to a cosine function, and the peak value dec

Example Embodiment

[0042] Example 2:

[0043] Such as Figure 5 (a), (b), and (c) show the refractive index distribution, the near-field and far-field intensity distribution of the fundamental transverse mode of a 980nm wavelength Bragg reflection waveguide dual-beam laser. Its lower waveguide layer and upper waveguide layer both use 6 pairs of Al with a thickness of 100nm / 600nm respectively 0.35 Ga 0.65 As / Al 0.1 Ga 0.9 As periodic waveguide, where Al 0.35 Ga 0.65 As and Al 0.1 Ga 0.9 The refractive index of As material is 3.31 and 3.45 respectively; the defect layer material is Al 0.1 Ga 0.7 As, thickness is 400nm, refractive index is 3.45; In active area 0.2 Ga 0.8 As / GaAs quantum wells (QWs). From Figure 4 (b) The near-field intensity distribution of the medium fundamental mode can be seen that even if the defect layer uses a high-refractive material, by reducing its thickness, a near-field electric field distribution close to the cosine function can be obtained. Thus, the effective refract

Example Embodiment

[0044] Example 3:

[0045] Such as Image 6 (a), (b), and (c) show the refractive index distribution, the near-field and far-field intensity distribution of the fundamental transverse mode of an 850nm wavelength Bragg reflection waveguide dual-beam laser. Its lower waveguide layer and upper waveguide layer both use 8 pairs of Al with a thickness of 200nm / 500nm. 0.15 Ga 0.85 As / Al 0.3 Ga 0.7 As periodic waveguide, where Al 0.15 Ga 0.85 As and Al 0.3 Ga 0.7 The refractive index of As material at 850nm wavelength is about 3.5 and 3.4 respectively; the defect layer material is 1μm thick Al 0.35 Ga 0.65 As, the refractive index is about 3.37. From Image 6 (B) It can be seen that when the lower confinement layer and the upper confinement layer do not exist, stronger optical field confinement can be obtained by increasing the logarithm of the Bragg mirror period, and the leakage loss of the laser can be kept at a low level.

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

PropertyMeasurementUnit
Thicknessaaaaaaaaaa
Thicknessaaaaaaaaaa
Thicknessaaaaaaaaaa
Login to view more

Abstract

The invention relates to a Bragg reflection waveguide double-beam laser which sequentially comprises an N-plane electrode, a substrate, a buffer layer, a lower waveguide layer, a defective layer, an upper waveguide layer, a cover layer and a P-plane electrode from bottom to top. An active region is arranged in the defective layer; the lower waveguide layer comprises a plurality of pairs of Bragg reflectors formed in a mode that N-type doped high and low refractive index material layers periodically and alternately grow; the upper waveguide layer comprises a plurality of pairs of Bragg reflectors formed in a mode that P-type doped high and low refractive index material layers periodically and alternately grow; and the effective refractive index of a guided mode is lower than those of the P-type doped low refractive index material layers and the N-type doped low refractive index material layers. The Bragg reflection waveguide double-beam laser disclosed by the invention can directly output two beams of stable laser with low transversal divergence, separated angles between the double beams and controllable power symmetry and has wide application prospect in the fields of high-speed laser scanning, high-precision laser detection, laser processing, an off-axis outer cavity, coherent coupling and the like.

Description

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Owner CHANGCHUN INST OF OPTICS FINE MECHANICS & PHYSICS CHINESE ACAD OF SCI
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products