Bragg reflection waveguide double-beam laser and application method thereof
A Bragg reflection, double beam technology, applied in semiconductor lasers, lasers, laser parts and other directions, can solve the problems of difficult to stabilize the output power of the device, complex optical alignment, difficult to mass production, etc., to achieve compactness and high stability , large laser cavity, the effect of improving reliability
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[0040] Example 1:
[0041] Such as Figure 4 (a), (b), and (c) show the refractive index distribution, the near-field and far-field intensity distribution of the fundamental transverse mode of a 980nm wavelength Bragg reflection waveguide dual-beam laser. Its lower waveguide layer and upper waveguide layer both use 6 pairs of Al with a thickness of 100nm / 600nm respectively 0.1 Ga 0.9 As / Al 0.3 Ga 0.7 As periodic waveguide, where Al 0.1 Ga 0.9 As and Al 0.3 Ga 0.7 The refractive index of As material is about 3.45 and 3.34 respectively; the defect layer material is Al 0.3 Ga 0.7 As, thickness is 1300nm, refractive index is 3.34; In active area 0.2 Ga 0.8 As / GaAs quantum wells (QWs) are located in the center of the defect layer. From Figure 4 (b) Near-field intensity distribution of the fundamental mode. It can be seen that the near-field electric field distribution of the fundamental mode of the laser in the present invention is close to a cosine function, and the peak value dec
Example Embodiment
[0042] Example 2:
[0043] Such as Figure 5 (a), (b), and (c) show the refractive index distribution, the near-field and far-field intensity distribution of the fundamental transverse mode of a 980nm wavelength Bragg reflection waveguide dual-beam laser. Its lower waveguide layer and upper waveguide layer both use 6 pairs of Al with a thickness of 100nm / 600nm respectively 0.35 Ga 0.65 As / Al 0.1 Ga 0.9 As periodic waveguide, where Al 0.35 Ga 0.65 As and Al 0.1 Ga 0.9 The refractive index of As material is 3.31 and 3.45 respectively; the defect layer material is Al 0.1 Ga 0.7 As, thickness is 400nm, refractive index is 3.45; In active area 0.2 Ga 0.8 As / GaAs quantum wells (QWs). From Figure 4 (b) The near-field intensity distribution of the medium fundamental mode can be seen that even if the defect layer uses a high-refractive material, by reducing its thickness, a near-field electric field distribution close to the cosine function can be obtained. Thus, the effective refract
Example Embodiment
[0044] Example 3:
[0045] Such as Image 6 (a), (b), and (c) show the refractive index distribution, the near-field and far-field intensity distribution of the fundamental transverse mode of an 850nm wavelength Bragg reflection waveguide dual-beam laser. Its lower waveguide layer and upper waveguide layer both use 8 pairs of Al with a thickness of 200nm / 500nm. 0.15 Ga 0.85 As / Al 0.3 Ga 0.7 As periodic waveguide, where Al 0.15 Ga 0.85 As and Al 0.3 Ga 0.7 The refractive index of As material at 850nm wavelength is about 3.5 and 3.4 respectively; the defect layer material is 1μm thick Al 0.35 Ga 0.65 As, the refractive index is about 3.37. From Image 6 (B) It can be seen that when the lower confinement layer and the upper confinement layer do not exist, stronger optical field confinement can be obtained by increasing the logarithm of the Bragg mirror period, and the leakage loss of the laser can be kept at a low level.
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