Chip of light-emitting diode and preparation method thereof

[0050] see figure 1 and figure 2, the embodiment of the present invention provides a LED chip, the chip includes: a substrate layer 1, an N-type layer 2 sequentially covered on the substrate layer 1, a light-emitting layer 3, a P-type layer 4 and a transparent conductive layer 5, and respectively The N electrode 6 and the P electrode 7 drawn out on the N type layer 2 and the P type layer 4 . Wherein, the chip further includes a transparent medium layer covering the bottom surface of the substrate layer 1 and / or the upper surface of the transparent conductive layer 5 . The refractive index of the transparent medium layer covering the bottom surface of the substrate layer 1 is higher than that of the substrate layer 1 ; the refractive index of the transparent medium layer covering the upper surface of the transparent conductive layer 5 is higher than that of the transparent conductive layer 5 .

[0051] Specifically, the substrate layer 1 includes a sapphire substrate, a silic

[0063] The embodiment of the present invention provides a method for preparing an LED chip, and the method flow includes:

[0064] 201: Provide a substrate layer, and sequentially grow an N-type layer, a light-emitting layer, a P-type layer, and a transparent conductive layer on the substrate layer.

[0065] 202: Prepare a wafer.

[0066] Among them, the preparation of the wafer includes: setting the N electrode and the P electrode on the N type layer and the P type layer respectively, and depositing a passivation layer on the transparent conductive layer, forming a transparent layer with a higher refractive index than the substrate layer on the bottom surface of the substrate layer. Dielectric layer made of transparent dielectric to obtain wafer. Or, form a transparent medium layer made of a transparent medium with a higher refractive index than the transparent conductive layer on the upper surface of the transparent conductive layer, set the N electrode and the P electrode on

[0071] The embodiment of the present invention provides a method for preparing an LED chip, and the method flow includes:

[0072] 301: Provide a substrate layer, and sequentially grow an N-type layer, a light-emitting layer, a P-type layer, and a transparent conductive layer on the substrate layer.

[0073] Specifically, an N-type layer 32, a light-emitting layer 33, a P-type layer 34, and a transparent conductive layer 35 can be grown on the substrate layer 31 by means of MOCVD (Metal-organic Chemical Vapor Deposition) (see Figure 4 ). This is a well-known technology in the art and will not be described in detail here.

[0074] Wherein, the substrate layer 31 may be a sapphire substrate, a silicon substrate, a silicon carbide substrate or a gallium nitride substrate.

[0075] In addition, the N-type layer 32, the light emitting layer 33, and the P-type layer 34 are all made of GaN.

[0076] 302: Arrange N electrodes and P electrodes on the N-type layer and P-type layer resp