Silicon-based temperature-stable type microwave dielectric ceramic material and preparation method thereof

A microwave dielectric ceramic and temperature-stable technology, which is applied in the field of silicon-based temperature-stable microwave dielectric ceramic materials and its preparation, can solve the problems of high sintering temperature, increase in dielectric constant, and high cost of preparation methods, and achieve improved transmission rate, Effect of improving selectivity and ensuring thermal stability

Active Publication Date: 2020-07-31
GUILIN UNIVERSITY OF TECHNOLOGY
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  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Benefits of technology

The technical effect of this new type of material described in this patents improves signal speed while maintaining good performance at frequencies above 1 GHz for use in electronic devices such as communication systems or radar technology. This results from its unique properties which allow certain materials to have specific values called capacitance constants (Cs), resulting in improved transmitting rates over longer distances than previous designs. Additionally, there're also some benefits like higher efficiency and reduced sensitivity towards changes made during manufacturing processes compared to existing methods used previously.

Problems solved by technology

This patented technical problem addressed by this patents relates to developing a stable and efficient type of microwaves dielectrics used in electronic devices that require small size while maintaining their performance level. Current methods involve expensive processes such as solid state reaction techniques like chemical vapor deposition (CVI)-related vacuum evaporation technique, liquid phase epitaxy growth, etc., making them difficult to achieve consistently within specifications set forth in industry standards.

Method used

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  • Silicon-based temperature-stable type microwave dielectric ceramic material and preparation method thereof
  • Silicon-based temperature-stable type microwave dielectric ceramic material and preparation method thereof
  • Silicon-based temperature-stable type microwave dielectric ceramic material and preparation method thereof

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[0027] The composition of the microwave dielectric ceramic material of the present invention is Li 2 CO 3 , Yb 2 o 3 , SiO 2 , the composition of the microwave dielectric ceramic material is LiYbSiO 4 Stoichiometric ratio is carried out proportioning, and its preparation method comprises the following steps:

[0028] (1) with Li 2 CO 3 , Yb 2 o 3 , and SiO 2 As raw material, Yb 2 o 3 Pre-fired at 1000 °C for 2 hours, and then these raw materials were prepared according to LiYbSiO 4 Stoichiometric ratio for proportioning weighing;

[0029] (2) The raw materials weighed in step (1), zirconia ball milling beads, and dehydrated alcohol are placed in a ball mill jar according to a mass ratio of 1:2:2.5, and then the ball mill jar is placed in a planetary ball mill for ball milling, Ball milling for 6 hours; after ball milling, the slurry-like raw material is dried to obtain raw material mixture powder;

[0030] (3) Pressing the mixture powder obtained by drying in step (

Embodiment 1

[0036] (1) with Li 2 CO 3 , Yb 2 o 3 , and SiO 2 As raw material, Yb 2 o 3 Pre-fired at 1000 °C for 2 hours, and then these raw materials were prepared according to LiYbSiO 4 Stoichiometric ratio for proportioning weighing;

[0037] (2) The raw materials weighed in step (1), zirconia ball milling beads, and dehydrated alcohol are placed in a ball mill jar according to a mass ratio of 1:2:2.5, and then the ball mill jar is placed in a planetary ball mill for ball milling, Ball milling for 6 hours; after ball milling, the slurry-like raw material is dried to obtain raw material mixture powder;

[0038] (3) Compressing the mixture powder obtained by drying in step (2) into a block, and calcining at 1000° C. for 4 hours, so that the raw material mixture sample is initially reacted to obtain a sample sintered block;

[0039] (4) Grind the sample sintered block obtained from the preliminary reaction in step (3) into a powder, then put the powder, zirconia ball milling beads, an

Embodiment 2

[0046] (1) with Li 2 CO 3 , Yb 2 o 3 , and SiO 2 As raw material, Yb 2 o 3 Pre-fired at 1000 °C for 2 hours, and then these raw materials were prepared according to LiYbSiO 4 Stoichiometric ratio for proportioning weighing;

[0047] (2) The raw materials weighed in step (1), zirconia ball milling beads, and dehydrated alcohol are placed in a ball mill jar according to a mass ratio of 1:2:2.5, and then the ball mill jar is placed in a planetary ball mill for ball milling, Ball milling for 6 hours; after ball milling, the slurry-like raw material is dried to obtain raw material mixture powder;

[0048] (3) Compressing the mixture powder obtained by drying in step (2) into a block, and calcining at 1020° C. for 4 hours to make a preliminary reaction of the raw material mixture sample to obtain a sample sintered block;

[0049] (4) Grind the sample sintered block obtained from the preliminary reaction in step (3) into a powder, then put the powder, zirconia ball milling beads

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Abstract

The invention discloses a silicon-based temperature-stable type microwave dielectric ceramic material and a preparation method thereof. The components of the microwave dielectric ceramic material areLi2CO3, Yb2O3 and SiO2, and the components of the microwave dielectric ceramic material are proportioned according to the stoichiometric ratio of LiYbSiO4. A traditional solid-phase reaction sinteringmethod is adopted, the preparation method is simple, and the sintering temperature is low. According to the prepared silicon-based temperature-stable microwave dielectric ceramic material, a near-zero resonant frequency temperature coefficient is obtained under the condition that a modifying material does not need to be added. The LiYbSiO4 ceramic prepared by the method disclosed by the inventionhas good microwave dielectric properties: the [epsilon]r ranges from 7.36 to 7.42, the quality factor Qf ranges from 19081 GHz to 25276 GHz, and the temperature coefficient of resonance frequency ranges from + 4.52 ppm/DEG C to + 8.03 ppm/DEG C.

Description

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Claims

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Application Information

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Owner GUILIN UNIVERSITY OF TECHNOLOGY
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