Phase change memory unit and preparation method thereof

[0049] The core idea of ​​the present invention is that the present invention provides a phase change memory cell and a preparation method thereof. A phase change memory cell of the present invention includes a bottom electrode, a phase change material stabilization layer, a phase change material layer and a top electrode that are sequentially connected; wherein the phase change material stabilization layer has conductivity, and the phase change material is electrically conductive at a certain temperature. The reaction between the stable layer of the change material and the layer of the phase change material at the interface can avoid the failure of the phase change unit caused by the separation of elements in the phase change material layer, and can be simpler and compatible with the existing standard CMOS The process compatible method prepares phase change memory cells with high reliability and high integration density.

[0050] The specific embodiments of the present invention wi

[0052] Example one

[0053] In the following specific embodiments of the present invention, please refer to Image 6 , Image 6 It is a schematic diagram of the structure of a phase change memory cell of the present invention. Such as Image 6 As shown, the phase change memory cell is provided on a substrate 101. The substrate 101 may include a semiconductor material, such as a silicon substrate, a gallium arsenide substrate, a germanium substrate, a silicon germanium substrate, or a fully depleted silicon-on-insulator (FDSOI) substrate. The substrate can also be an integrated circuit, including an integrated circuit with gate transistors such as transistors, diodes, and the like. The substrate may also be an interconnection layer, such as a copper interconnection layer, a graphene interconnection layer, and the like.

[0054] Please refer to Image 6 . In this embodiment, a first dielectric layer 102 is provided on the substrate 101, and a bottom electrode 103 is provided in the f

[0076] Example two

[0077] Please refer to Picture 12 . In this embodiment, a first dielectric layer 202 is provided on the substrate 201, and the bottom electrode 203 is provided in the first dielectric layer 202; and the lower surface of the bottom electrode 203 is connected to the upper surface of the substrate 201. The bottom electrode 203 is disposed on the lower layer of the phase change material stabilization layer 204, and the upper surface of the bottom electrode 203 is connected to the lower surface of the phase change material stabilization layer 204.

[0078] There are two phase change material layers 207, which are separately arranged on both sides of the phase change material stabilization layer 204. The inner sides of the two phase change material layers 207 are connected to the two sides of the phase change material stabilization layer 204, and the two phase change The upper surface of the material layer 207 is respectively connected to the lower surface of a top el