Error correction method and device for memory, electronic equipment and medium

An error correction method and memory technology, applied in the field of devices, electronic equipment and media, and memory error correction methods, can solve problems affecting the accuracy of neural networks, reduce wasted time, increase error correction performance, and error correction capabilities Enhanced effect

Pending Publication Date: 2022-04-12
INST OF SEMICONDUCTORS - CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

But this kind of training can only be offline, and the weights of the trained neural network will no longer change
However, the noise characteristics of NAN

Method used

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  • Error correction method and device for memory, electronic equipment and medium
  • Error correction method and device for memory, electronic equipment and medium
  • Error correction method and device for memory, electronic equipment and medium

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Embodiment Construction

[0035] In order to make the purpose, technical solutions and advantages of the present disclosure clearer, the present disclosure will be further described in detail below in conjunction with specific embodiments and with reference to the accompanying drawings. It should be understood, however, that these descriptions are exemplary only, and are not intended to limit the scope of the present disclosure. In the following detailed description, for purposes of explanation, numerous specific details are set forth in order to provide a thorough understanding of the embodiments of the present disclosure. It may be evident, however, that one or more embodiments may be practiced without these specific details. Also, in the following description, descriptions of well-known structures and techniques are omitted to avoid unnecessarily obscuring the concepts of the present disclosure.

[0036] The terminology used herein is for the purpose of describing particular embodiments only, and is n

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Abstract

The invention provides an error correction method for a memory, and the method comprises the steps: inserting a first guide sequence into a preset position where first data needs to be stored, and obtaining second data; encoding the second data to obtain third data containing check bit information; after the third data is read and written in the memory, converting the first guide sequence into a second guide sequence under the influence of noise to obtain fourth data; replacing the second guide sequence with the first guide sequence to obtain fifth data; and performing error correction on the fifth data according to the parity check matrix and the check bit information. The invention further provides an error correction device for the memory, electronic equipment and a medium. According to the invention, the guiding sequence is introduced, and the parity check matrix and the generated check bit information are utilized to carry out error correction, so that the error correction capability of the memory is improved.

Description

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Claims

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Application Information

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Owner INST OF SEMICONDUCTORS - CHINESE ACAD OF SCI
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