Non-volatile memory device and operating method thereof

Inactive Publication Date: 2013-06-20
SK HYNIX INC
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Benefits of technology

[0011]Various embodiments generally relate to a non-volatile memory device in which an offset voltage is set for each memory cell group of a

Problems solved by technology

This read method, however, has a problem in that a chip size is increased due to

Method used

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  • Non-volatile memory device and operating method thereof
  • Non-volatile memory device and operating method thereof
  • Non-volatile memory device and operating method thereof

Examples

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Embodiment Construction

[0019]Hereinafter, various embodiments of the present disclosure will be described with reference to the accompanying drawings. However, embodiments may be implemented in many different forms and should not be construed as being limited to the embodiments set forth herein. Rather, these embodiments are provided so that the disclosure will be thorough and complete, and will fully convey the scope of the invention to those skilled in the art.

[0020]FIG. 1 is a block diagram of a non-volatile memory device according to an embodiment.

[0021]Referring to FIG. 1, a non-volatile memory device 100 may include a memory unit 110, a peripheral circuit unit, a processor 150, a data buffer 160, and an external input / output circuit 170. The memory unit 110 including a cam block and a plurality of memory blocks MB1 to MBN. The peripheral circuit unit may include a register 120, a input / output buffer 130 and a voltage providing unit 140.

[0022]The plurality of memory blocks MB1 to MBN of the memory u

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Abstract

A non-volatile memory device and an operating method thereof are provided. The non-volatile memory device includes a memory unit including a plurality of memory blocks and a cam block, a peripheral circuit unit configured to program memory cells included in the plurality of memory blocks and the cam block or read programmed data, and a processor configured to control the peripheral circuit unit to measure an offset voltage by memory cell group in the plurality of memory blocks to set a read voltage during a test read operation and control the peripheral circuit unit to perform a read operation by memory cell group by using a new read voltage during a read operation.

Description

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Claims

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Application Information

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Owner SK HYNIX INC
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