Nitride semiconductor device
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Embodiment 1
[0062]Hereinafter, a nitride semiconductor device according to Embodiment 1 will be described with reference to the drawings.
[0063]FIG. 1A is a plan view of a layout of nitride semiconductor device 100 according to this embodiment. FIG. 1B is a cross-sectional view of nitride semiconductor device 100 according to this embodiment at cross-section 1B-1B in FIG. 1A. FIG. 1C is a cross-sectional view of nitride semiconductor device 100 according to this embodiment at cross-section 1C-1C in FIG. 1A.
[0064]Hereinafter, the configuration of nitride semiconductor device 100 will be described using FIG. 1A to FIG. 1C.
[0065]Nitride semiconductor device 100 is a nitride semiconductor device using a nitride semiconductor and includes, as illustrated in FIG. 1C, substrate 101, buffer layer 102, stacked structure portion 105, first main electrode 110, second main electrode 120, control electrode 130, insulating film 140, first lead-out line 150, second lead-out line 160. Furthermore, as i
Example
Embodiment 2
[0107]Hereinafter, a nitride semiconductor device according to Embodiment 2 will be described. The nitride semiconductor device according to this embodiment is different from nitride semiconductor device 100 according to Embodiment 1 in the point of including hole injection portions for reducing electrons trapped in the surface of stacked structure portion 105. Hereinafter, the nitride semiconductor device according to this embodiment will be described with reference to the drawings, centering on the points of difference with nitride semiconductor device 100 according to Embodiment 1.
[0108]FIG. 2A is a plan view of a layout of nitride semiconductor device 200 according to this embodiment. Furthermore, FIG. 2B is a cross-sectional view of nitride semiconductor device 200 according to this embodiment at cross-section 2B-2B in FIG. 2A. FIG. 2C is a cross-sectional view of nitride semiconductor device 200 according to this embodiment at cross-section 2C-2C in FIG. 2A.
[0109]As i
Example
Embodiment 3
[0119]Hereinafter, a nitride semiconductor device according to Embodiment 3 will be described. The nitride semiconductor device according to this embodiment is different from nitride semiconductor device 200 according to Embodiment 2 in the point that the hole injection portion surrounds second main electrode 120. Hereinafter, the nitride semiconductor device according to this embodiment will be described with reference to the drawings, centering on the points of difference with nitride semiconductor device 200 according to Embodiment 2.
[0120]FIG. 3A is a plan view of a layout of nitride semiconductor device 300 according to this embodiment. FIG. 3B is a cross-sectional view of nitride semiconductor device 300 according to this embodiment at cross-section 3B-3B in FIG. 3A. FIG. 3C is a cross-sectional view of nitride semiconductor device 300 according to this embodiment at cross-section 3C-3C in FIG. 3A.
[0121]Nitride semiconductor device 300 according to this embodiment inc
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