The invention provides a GaN-base ultra-thin potential barrier reinforced and depletion mode phase
inverter, ring oscillation and a manufacturing method of the phase
inverter. By means of surface SiN, channel square resistance of an ultra-thin potential barrier
heterojunction is effectively reduced, by means of adjustment of thicknesses of SiN under a gate, a reinforced type component and a depletion type component can be achieved respectively, the SiN under the reinforced type component is etched, the concentration of channel electrons under the gate of the reinforced type component is very low, the reinforced type component can reflect a reinforced characteristic of positive
threshold voltage, the SiN is maintained under the gate of the depletion type component, high-concentration two-dimensional
electron gases exist under the gate of the depletion type component, the depletion type component reflects a depletion type characteristic of negative
threshold voltage, the phase
inverter is formed after the reinforced type component and the depletion type component are integrated, then 2n+1 identical phase inverters are in
concatenation, and ring oscillation can be achieved.