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1 results about "Saturation current" patented technology

The saturation current (or scale current), more accurately, the reverse saturation current, is that part of the reverse current in a semiconductor diode caused by diffusion of minority carriers from the neutral regions to the depletion region. This current is almost independent of the reverse voltage. (Steadman 1993, 459) IS, the reverse bias saturation current for an ideal p–n diode, is given by (Schubert 2006, 61): IS=eAnᵢ²(1/ND√(Dₚ/τₚ)+1/NA√(Dₙ/τₙ)), where e is elementary charge A is the cross-sectional area Dₚ, Dₙ are the diffusion coefficients of holes and electrons, respectively, ND, NA are the donor and acceptor concentrations at the n side and p side, respectively, nᵢ is the intrinsic carrier concentration in the semiconductor material, τₚ,τₙ are the carrier lifetimes of holes and electrons, respectively.

Test structure and method for monitoring probe mark offset by using same

The invention relates to the technical field of integrated circuit testing, particularly to a test structure and a method for monitoring probe mark offset by using the same. According to the test structure disclosed by the invention, a novel test structure is introduced to conventional WAT (wafer acceptance test); the number N (N is greater than or equal to 4) of metal bond pads is consistent to the number of monitored probe clamping pins; an active device is put below each metal bond pad; gates, sources and drains of the N (N is greater than or equal to 4) active devices, and a substrate are connected in parallel to be connected to four different bond pads respectively; and by measuring saturation current of the active devices in different positions below the bond pads, the offset condition of the probe pins can be monitored in real time.
Owner:WUHAN XINXIN SEMICON MFG CO LTD
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