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2 results about "Source area" patented technology

Definition of Source area. Source area means a component of urban land use in- cluding rooftops, sidewalks, driveways, parking lots, storage areas, streets and lawns from which urban runoff pollutants are generated during periods of snow melt and rainfall runoff.

Method and device of mountain fire detection

ActiveCN105261143AShorten the timeReduce data processing timeFire alarm radiation actuationSource areaComputer science
The present invention provides a method of mountain fire detection. The method of mountain fire detection is used for controlling a pan-tilt system to detect mountain fire in a setting scanning area. The method of mountain fire detection comprises: controlling the pan-tilt system to perform pre-scanning of the setting scanning area, and obtaining pre-scanning data; identifying at least one non-fire heat source area in the setting scanning area according to the pre-scanning data; controlling the pan-tilt system to scan other areas except the non-fire heat source area in the setting scanning area; marking areas with respect to the scanning data larger than a preset threshold value to be suspected fire areas through adoption of the pan-tilt system when the scanning data obtained by the scanning of the pan-tilt system in the other areas except the non-fire heat source area in the setting scanning area is larger than the preset threshold value, and obtaining on-site information of the suspected fire areas; and sending alarm information to a preset terminal, the alarm information consisting of the on-site information of the suspected fire areas. The present invention further provides a device of mountain fire detection, and the technical problems of low accuracy and timeliness of a mountain fire alarm in the prior art are solved through adoption of the device of mountain fire detection.
Owner:SICHUAN HUIYUAN OPTICAL COMM CO LTD

FEMFET device and method for producing same

InactiveCN1129190CTransistorSolid-state devicesGate stackSource area
The present invention relates to a FEMFET device with a semiconductor substrate and to at least one field effect transistor that is provided in the semiconductor substrate. The field effect transistor has a source area, a drain area, a channel area and a gate stack. The gate stack has at least one ferroelectric layer and at least one thin diffusion barrier layer being arranged between the lowest ferroelectric layer and the semiconductor substrate and being configured in such a way that an out-diffusion of the components of the ferroelectric layer into the semiconductor substrate is essentially prevented.
Owner:INFINEON TECH AG
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