FEMFET device and method for producing same

technical field [0001] The invention relates to a ferroelectric memory field effect transistor device (hereinafter referred to as FEMFET) and a manufacturing method thereof. Background technique [0002] The device has: a semiconductor substrate; at least one field effect transistor disposed on the semiconductor substrate and having a source region, a drain region, a channel region and a gate stack (gate stack); The stack has at least one ferroelectric layer; the gate stack (GS) has at least one thin diffusion barrier layer (50), which is arranged on the bottom of the ferroelectric layer (FE) and the semiconductor substrate (10 ) and its configuration structure should basically prevent the components of the ferroelectric layer (or layer) (FE) from diffusing to the semiconductor substrate (10); at least one dielectric buffer layer (60) is arranged on the ferroelectric layer ( FE) and the semiconductor substrate (10) on the gate stack (GS); and the diffusion barrier layer (50...