6 results about "Hydrofluoric acid" patented technology

The invention discloses Mn<4+> doped fluoroaluminate red fluorescent powder as well as a preparation method and an application thereof. The method comprises steps as follows: hydrofluoric acid and water are added to a polytetrafluoroethylene container, K2MnF6 is added and stirred to be dissolved, and then KF is added; after KF is dissolved, K3AlF6 is added and continuously stirred to be completely dissolved, and then the mixture is continuously stirred for 30 min; the mixture is left to stand after stirring is stopped, suction filtration is performed, a filter cake is dried under the vacuum condition at the temperature of 70 DEG C, and the Mn<4+> doped fluoroaluminate red fluorescent powder is obtained. Compared with the prior art, the K3AlF6:Mn<4+> red fluorescent powder is synthesized in a hydrofluoric acid aqueous solution, and the diluted aqueous solution has a function of purifying the K3AlF6 phase; excessive KF.2H2O is added, so that the K3AlF6 phase is crystallized and separated to be purified in the aqueous solution; the obtained fluorescent powder has a narrow emission spectrum range, and the reabsorption phenomenon is effectively avoided; the phase of the synthesized fluorescent powder is pure, and the light emitting efficiency and collection rate are high; the color gamut range of a white light LED device packaged by the fluorescent powder is wide.

A method is used for manufacturing a semiconductor wafer. The back surface of a semiconductor wafer is ground. The back surface is cleaned with ozone water. The back surface of the semiconductor wafer is etched with a mixed acid that contains hydrofluoric acid and nitric acid. The cleaning and etching are carried out alternately such that the cleaning and etching are each repeated a plurality of times. The etching is performed after the grinding, beginning when the semiconductor wafer is wet with the ozone water. The cleaning is performed after the etching, beginning when the semiconductor wafer is wet with an etching solution.

The invention discloses a quartz rod cutting process. The quartz rod cutting process includes the following steps that firstly, pretreatment is conducted, specifically, a quartz rod is soaked in hydrofluoric acid with the concentration being 5% and then taken out to be rinsed through pure water; secondly, a swelling binder is coated on a surface layer of the quartz rod; thirdly, the quartz rod isplaced in a wax sticking groove, an adhesion agent is poured into the wax sticking groove, and the adhesion agent wraps the quartz rod; fourthly, the quartz rod wrapped with the adhesion agent is subjected to still standing, solidification and forming at the room temperature; fifthly, the solidified and formed adhesion agent and quartz rod are taken out, and the adhesion agent and the quartz rod are integrally cut through a cutting machine; and sixthly, the cut adhesion agent and quartz rod are placed in a boiling pot to be subjected to boiling andadhesion agent removal treatment, and the cutquartz rod is obtained. According to the quartz rod cutting process, the adhesion agent wraps the quartz rod, the quartz rod is integrally fixed through the solidified and formed adhesion agent, the adhesion agent and the quartz rod are integrally cut through the cutting machine, and thus the quartz rod cannot deform after being cut.

The invention discloses an etching method for the diffusion layer of a crystalline silicon solar battery sheet. First, the silicon sheet that has been diffused and doped is put into a tubular thermal oxidation furnace, and a silicon sheet is deposited on the front side of the silicon sheet by a chemical vapor deposition method. layer of silicon dioxide film; place the silicon chip in the mixed solution of phosphoric acid and nitric acid to fully react the silicon chip with the solution, wherein the molar ratio of phosphoric acid to nitric acid is phosphoric acid: nitric acid = 2-5:10; Put the chip into hydrofluoric acid solution, remove the silicon dioxide film layer on the surface of the silicon chip, and then rinse it with deionized water. The etching method of the invention has the advantages of simple process, low equipment requirements, easy monitoring of the etching process, high production efficiency, and can effectively reduce the number of low-efficiency cells caused by etching.

The invention discloses a hydrophilic hollow silicon sphere as well as a preparation method and application thereof. The hydrophilic hollow silicon sphere is prepared by modifying the surface of a silicon-oxygen structured double-bond silicon sphere, which is formed by performing catalytic reaction on vinyltriethoxysilane and is used as a core, with glutathione, and etching a sphere center with hydrofluoric acid. Drug encapsulation and in-vitro simulated releasing experimental results show that compared with a hollow silicon sphere of a contrast group, the hollow silicon sphere prepared with the preparation method disclosed by the invention has a significant difference in drug loading and in-vitro releasing of camptothecin, so that the hydrophilic hollow silicon sphere prepared with the preparation method is relatively high in loading capacity and relatively good in controlled release effect. The hydrophilic hollow silicon sphere is simple in design; no reaction conditions such as high temperature and high pressure are needed; the particle size distribution of the silicon sphere is uniform; feasibility is provided for industrial production of the hydrophilic hollow silicon sphere; a new way is provided for researches on drug slow release carriers; the hydrophilic hollow silicon sphere has good social and economical benefits.