Method for controlling terminal by using chlorine trifluoride to etch polysilicon growth furnace

[0013] see Figure 1a , which is a cross-sectional schematic diagram of a polysilicon growth furnace. It includes a quartz outer tube 11 and a quartz inner tube 12 , and at least one temperature detection device 13 is provided between the quartz outer tube 11 and the inner tube 12 near the reaction gas outlet 22 . After the polysilicon growth furnace is used many times, polysilicon 14 grows on the tube walls of the quartz outer tube 11 and the inner tube 12 . After starting to feed chlorine trifluoride gas into the polysilicon growth furnace, chlorine trifluoride enters the polysilicon growth furnace from the bottom 21 between the quartz inner tubes 12, and the gas after the reaction passes between the quartz outer tube 11 and the inner tube 12. The bottom 22 leaves the polysilicon growth furnace.

[0014] see Figure 1b After passing chlorine trifluoride gas into the polysilicon growth furnace for a period of time, the polysilicon on the inner wall of the quartz inner tube 12